IPP60R099P6 Todos los transistores

 

IPP60R099P6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPP60R099P6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 278 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 37.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 140 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.099 Ohm
   Paquete / Cubierta: TO-220
 

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IPP60R099P6 datasheet

 ..1. Size:2269K  infineon
ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf pdf_icon

IPP60R099P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi... See More ⇒

 ..2. Size:245K  inchange semiconductor
ipp60r099p6.pdf pdf_icon

IPP60R099P6

isc N-Channel MOSFET Transistor IPP60R099P6 IIPP60R099P6 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us... See More ⇒

 4.1. Size:1742K  infineon
ipp60r099p7.pdf pdf_icon

IPP60R099P6

IPP60R099P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ ... See More ⇒

 4.2. Size:244K  inchange semiconductor
ipp60r099p7.pdf pdf_icon

IPP60R099P6

isc N-Channel MOSFET Transistor IPP60R099P7 IIPP60R099P7 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE M... See More ⇒

Otros transistores... IPP60R330P6 , IPP60R280P6 , IPP60R230P6 , IPP60R1K4C6 , IPP60R190P6 , IPP60R180C7 , IPP60R160P6 , IPP60R125P6 , AO4407A , IPP60R099C7 , IPP60R074C6 , IPP60R040C7 , IPP50R500CE , IPP50R280CE , IPP50R190CE , IPP410N30N , IPP25N06S3-25 .

 

 
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