IPP60R099P6 Todos los transistores

 

IPP60R099P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPP60R099P6

Código: 6R099P6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 278 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 37.9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 140 pF

Resistencia drenaje-fuente RDS(on): 0.099 Ohm

Empaquetado / Estuche: TO-220

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IPP60R099P6 Datasheet (PDF)

1.1. ipp60r099c7.pdf Size:1879K _infineon

IPP60R099P6
IPP60R099P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ C7 600V CoolMOS™ C7 Power Transistor IPP60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS™ C7 Power Transistor IPP60R099C7 TO-220 1 Description CoolMOS™ C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

1.2. ipp60r099cpa.pdf Size:291K _infineon

IPP60R099P6
IPP60R099P6

IPP60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 ? DS(on),max Q 60 nC g,typ Features Worldwide best R in TO220 ds,on Ultra low gate charge PG-TO220-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for: DC/DC converters for Automotive Applica

 1.3. ipp60r099p6 ipw60r099p6.pdf Size:2269K _infineon

IPP60R099P6
IPP60R099P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS™ P6 600V CoolMOS™ P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS™ P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed accordi

1.4. ipp60r099c6 2 1.pdf Size:1385K _infineon

IPP60R099P6
IPP60R099P6

MOSFET + =L9D - PA<= 1=E A;GF>=;L 2J9FKAKLGJ !GGD+ - 1 ! 4 !GGD+ - 1Y ! .GO=J 2J9FKAKLGJ '.P 0 ! " 9L9 1 @==L 0 =N $AF9D 'FGJ @A?@ NGDL9?= HGO=J + - 1$#2K <=KA?F=< 9;;GJAF=GF 2

 1.5. ipp60r099cp rev2.2.pdf Size:571K _infineon

IPP60R099P6
IPP60R099P6

IPP60R099CP C??IMOSTM #:A0< &<,9=4=>:< #<:/?.> %?88,1.6. ipp60r099p7.pdf Size:244K _inchange_semiconductor

IPP60R099P6
IPP60R099P6

isc N-Channel MOSFET Transistor IPP60R099P7,IIPP60R099P7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE M

1.7. ipp60r099c7.pdf Size:244K _inchange_semiconductor

IPP60R099P6
IPP60R099P6

isc N-Channel MOSFET Transistor IPP60R099C7,IIPP60R099C7 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ·ABSOLUTE M

1.8. ipp60r099cp.pdf Size:245K _inchange_semiconductor

IPP60R099P6
IPP60R099P6

isc N-Channel MOSFET Transistor IPP60R099CP,IIPP60R099CP ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Ultra low gate charge ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

1.9. ipp60r099p6.pdf Size:245K _inchange_semiconductor

IPP60R099P6
IPP60R099P6

isc N-Channel MOSFET Transistor IPP60R099P6,IIPP60R099P6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us

1.10. ipp60r099c6.pdf Size:245K _inchange_semiconductor

IPP60R099P6
IPP60R099P6

isc N-Channel MOSFET Transistor IPP60R099C6,IIPP60R099C6 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.099Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Provide all benefits of a fast switching super junction MOS while not Sacrificing ease of use

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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