IPP60R074C6 Todos los transistores

 ..1. Size:1038K  infineon
 ipp60r074c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V 600V CoolMOS C6 Power Transistor IPP60R074C6 Data Sheet Rev. 2.0 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPP60R074C6 TO-220 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pione

 ..2. Size:207K  inchange semiconductor
 ipp60r074c6.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R074C6 FEATURES With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABS

 6.1. Size:1669K  infineon
 ipp60r070cfd7.pdf

IPP60R070CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application

 6.2. Size:206K  inchange semiconductor
 ipp60r070cfd7.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R070CFD7 FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAX

 7.1. Size:1890K  infineon
 ipp60r040c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPP60R040C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPP60R040C7 TO-220 1 Description CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

 7.2. Size:1879K  infineon
 ipp60r099c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPP60R099C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPP60R099C7 TO-220 1 Description CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

 7.3. Size:1716K  infineon
 ipp60r060c7.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C7 600V CoolMOS C7 Power Transistor IPP60R060C7 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C7 Power Transistor IPP60R060C7 TO-220 1 Description CoolMOS C7 is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle a

 7.4. Size:1687K  infineon
 ipp60r060p7.pdf

IPP60R060P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 7.5. Size:291K  infineon
 ipp60r099cpa.pdf

IPP60R099CPA CoolMOSTM Power Transistor Product Summary V 600 V DS R 0.105 DS(on),max Q 60 nC g,typ Features Worldwide best R in TO220 ds,on Ultra low gate charge PG-TO220-3-1 Extreme dv/dt rated High peak current capability Automotive AEC Q101 qualified Green package (RoHS compliant) CoolMOS CPA is specially designed for DC/DC converters for

 7.6. Size:1385K  infineon
 ipp60r099c6.pdf

MOSFET + =L9D - PA

 7.7. Size:1725K  infineon
 ipp60r090cfd7.pdf

IPP60R090CFD7 MOSFET PG-TO 220 600V CoolMOS CFD7 Power Transistor CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The latest CoolMOS CFD7 is the successor to the CoolMOS CFD2 series and is an optimized platform tailored to target soft switching application

 7.8. Size:2269K  infineon
 ipa60r099p6 ipp60r099p6 ipw60r099p6 ipw60r099p6 ipp60r099p6 ipa60r099p6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R099P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R099P6, IPP60R099P6, IPA60R099P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 7.9. Size:571K  infineon
 ipp60r099cp.pdf

IPP60R099CP C IMOSTM # A0

 7.10. Size:1746K  infineon
 ipp60r080p7.pdf

IPP60R080P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 7.11. Size:1742K  infineon
 ipp60r099p7.pdf

IPP60R099P7 MOSFET PG-TO 220 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for tab high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ

 7.12. Size:2087K  infineon
 ipa60r099c6 ipb60r099c6 ipp60r099c6 ipw60r099c6.pdf

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R099C6 Data Sheet Rev. 2.1, 2010-02-09 Final Industrial & Multimarket 600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6 IPP60R099C6 IPW60R099C6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the supe

 7.13. Size:1595K  infineon
 ipp60r022s7.pdf

IPP60R022S7 MOSFET PG-TO 220 600V CoolMOS SJ S7 Power Device IPP60R022S7 enables the best price performance for low frequency tab switching applications. CoolMOS S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS S7 is optimized for static switching and high current applications. It is an ideal fit for solid state

 7.14. Size:244K  inchange semiconductor
 ipp60r040c7.pdf

isc N-Channel MOSFET Transistor IPP60R040C7 IIPP60R040C7 FEATURES Static drain-source on-resistance RDS(on) 0.04 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine the experience of the leading SJ MOSFET supplier with high class innovation ABSOLU

 7.15. Size:244K  inchange semiconductor
 ipp60r099c7.pdf

isc N-Channel MOSFET Transistor IPP60R099C7 IIPP60R099C7 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE M

 7.16. Size:245K  inchange semiconductor
 ipp60r060c7.pdf

isc N-Channel MOSFET Transistor IPP60R060C7 IIPP60R060C7 FEATURES Static drain-source on-resistance RDS(on) 0.06 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combine the experience of the leading SJ MOSFET supplier with high class innovation ABSOLU

 7.17. Size:207K  inchange semiconductor
 ipp60r060p7.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP60R060P7 FEATURES With low gate drive requirements Very high commutation ruggedness Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications LCD&PDP TV PC silverbox UPS and solar ABS

 7.18. Size:245K  inchange semiconductor
 ipp60r099c6.pdf

isc N-Channel MOSFET Transistor IPP60R099C6 IIPP60R099C6 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Provide all benefits of a fast switching super junction MOS while not Sacrificing ease of use

 7.19. Size:245K  inchange semiconductor
 ipp60r099cp.pdf

isc N-Channel MOSFET Transistor IPP60R099CP IIPP60R099CP FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 )

 7.20. Size:245K  inchange semiconductor
 ipp60r080p7.pdf

isc N-Channel MOSFET Transistor IPP60R080P7 IIPP60R080P7 FEATURES Static drain-source on-resistance RDS(on) 0.08 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE MA

 7.21. Size:244K  inchange semiconductor
 ipp60r099p7.pdf

isc N-Channel MOSFET Transistor IPP60R099P7 IIPP60R099P7 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Combines the benefits of a fast switching SJ MOSFET with excellent ease of use ABSOLUTE M

 7.22. Size:245K  inchange semiconductor
 ipp60r099p6.pdf

isc N-Channel MOSFET Transistor IPP60R099P6 IIPP60R099P6 FEATURES Static drain-source on-resistance RDS(on) 0.099 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Provide all benefits of a fast switching super junction MOS while not sacrificing ease of us