IPP14N03LA Todos los transistores

 ..1. Size:348K  infineon
 ipb14n03la ipi14n03la ipp14n03la.pdf

 9.1. Size:771K  infineon
 ipb144n12n3g ipi147n12n3g ipp147n12n3g ipp147n12n3 ipi147n12n3 ipb144n12n3.pdf

IPB144N12N3 G IPI147N12N3 G IPP147N12N3 G 3 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R 14 7 m - @? >2I R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH

 9.2. Size:741K  infineon
 ipp147n03l .pdf

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 9.3. Size:740K  infineon
 ipp147n03l.pdf

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 9.4. Size:446K  infineon
 ipp147n03l-g ipb147n03l-g.pdf

Type IPP147N03L G IPB147N03L G OptiMOS 3 Power-Transistor Product Summary Features V 30 V DS Fast switching MOSFET for SMPS R 14.7 m DS(on),max Optimized technology for DC/DC converters I 20 A D Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(

 9.5. Size:244K  inchange semiconductor
 ipp147n12n3.pdf

isc N-Channel MOSFET Transistor IPP147N12N3 IIPP147N12N3 FEATURES Static drain-source on-resistance RDS(on) 14.7m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS