IRFP354PBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP354PBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 190 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 450 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 44 nS
Cossⓘ - Capacitancia de salida: 720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm
Encapsulados: TO247AC
Búsqueda de reemplazo de IRFP354PBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFP354PBF datasheet
..1. Size:1795K international rectifier
irfp354pbf.pdf 
PD- 95715 IRFP354PbF Lead-Free www.irf.com 1 8/3/04 IRFP354PbF 2 www.irf.com IRFP354PbF www.irf.com 3 IRFP354PbF 4 www.irf.com IRFP354PbF www.irf.com 5 IRFP354PbF 6 www.irf.com IRFP354PbF www.irf.com 7 IRFP354PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE T HIS IS AN IRFPE30 WITH ASSEMBLY PART
8.2. Size:1495K international rectifier
irfp350lcpbf.pdf
PD- 95714 IRFP350LCPbF Lead-Free 08/03/04 Document Number 91224 www.vishay.com 1 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 2 Downloaded from Elcodis.com electronic components distributor IRFP350LCPbF Document Number 91224 www.vishay.com 3 Downloaded from Elcodis.com electronic components distributor
8.3. Size:160K international rectifier
irfp350lc.pdf
PD - 9.1229 IRFP350LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 400V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.30 Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 16A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional
8.4. Size:872K international rectifier
irfp350.pdf
PD - 94877 IRFP350PbF Lead-Free 12/9/03 Document Number 91225 www.vishay.com 1 IRFP350PbF Document Number 91225 www.vishay.com 2 IRFP350PbF Document Number 91225 www.vishay.com 3 IRFP350PbF Document Number 91225 www.vishay.com 4 IRFP350PbF Document Number 91225 www.vishay.com 5 IRFP350PbF Document Number 91225 www.vishay.com 6 IRFP350PbF TO-247AC Package Ou
8.6. Size:232K fairchild semi
irfp350a.pdf
IRFP350A FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist
8.7. Size:220K samsung
irfp350-353.pdf
This datasheet has been downloaded from www.DatasheetCatalog.com Datasheets for electronic components.
8.8. Size:985K samsung
irfp350a.pdf
Advanced Power MOSFET FEATURES BVDSS = 400 V Avalanche Rugged Technology RDS(on) = 0.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = 17 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 400V Low RDS(ON) 0.254 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Valu
8.10. Size:1571K vishay
irfp350pbf.pdf
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead
8.11. Size:1574K vishay
irfp350 sihfp350.pdf
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli
8.12. Size:1303K vishay
irfp350lc sihfp350lc.pdf
IRFP350LC, SiHFP350LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 400 Available Reduced Gate Drive Requirement RDS(on) ( )VGS = 10 V 0.30 Enhanced 30V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 76 Isolated Central Mounting Hole Qgs (nC) 20 Dynamic dV/dt Rated Qgd (nC) 37 Repetitive Av
8.13. Size:1579K infineon
irfp350 sihfp350.pdf
IRFP350, SiHFP350 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 400 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.30 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 150 Fast Switching Qgs (nC) 23 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Compli
8.14. Size:237K inchange semiconductor
irfp351.pdf
isc N-Channel MOSFET Transistor IRFP351 FEATURES Drain Current I = 15A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.15. Size:236K inchange semiconductor
irfp353.pdf
isc N-Channel MOSFET Transistor IRFP353 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.16. Size:162K inchange semiconductor
irfp352r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP352(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS
8.17. Size:163K inchange semiconductor
irfp351r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP351(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS
8.18. Size:237K inchange semiconductor
irfp350a.pdf
isc N-Channel MOSFET Transistor IRFP350A FEATURES Drain Current I = 17A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
8.19. Size:162K inchange semiconductor
irfp353r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP353(R) FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 350V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS
8.20. Size:365K inchange semiconductor
irfp350lc.pdf
isc N-Channel MOSFET ransistor IRFP350LC FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies
8.21. Size:236K inchange semiconductor
irfp352.pdf
isc N-Channel MOSFET Transistor IRFP352 FEATURES Drain Current I = 13A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a
8.22. Size:62K inchange semiconductor
irfp350r.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor IRFP350R FEATURES Drain Current ID= 16A@ TC=25 Drain Source Voltage- VDSS= 400V(Min) Static Drain-Source On-Resistance RDS(on) = 0.3 (Max) Fast Switching DESCRIPTION Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATI
8.23. Size:237K inchange semiconductor
irfp350.pdf
isc N-Channel MOSFET ransistor IRFP350 FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage- V = 400V(Min) DSS Static Drain-Source On-Resistance R = 0.3 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies an
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