IPL65R460CFD Todos los transistores

 

IPL65R460CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPL65R460CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 45 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
   Paquete / Cubierta: THINPAK8X8
 

 Búsqueda de reemplazo de IPL65R460CFD MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPL65R460CFD Datasheet (PDF)

 ..1. Size:1801K  infineon
ipl65r460cfd.pdf pdf_icon

IPL65R460CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R460CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R460CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

 7.1. Size:1584K  infineon
ipl65r420e6.pdf pdf_icon

IPL65R460CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R420E6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R420E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

 8.1. Size:1796K  infineon
ipl65r070c7.pdf pdf_icon

IPL65R460CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R070C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R070C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 8.2. Size:1772K  infineon
ipl65r725cfd.pdf pdf_icon

IPL65R460CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R725CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R725CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

Otros transistores... IRFP354PBF , IRFP360PBF , IRFP362 , IRFP3703PBF , IRFP3710PBF , IPL65R725CFD , IPL65R660E6 , IPL65R650C6S , IRFP450 , IPL65R420E6 , IPL65R340CFD , IPL65R310E6 , IPL65R230C7 , IPL65R210CFD , IPL65R1K5C6S , IPL65R1K0C6S , IPL65R195C7 .

History: NTP52N10 | NCEP048N85D

 

 
Back to Top

 


 
.