IPL65R210CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IPL65R210CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 151 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8.4 nS
   Cossⓘ - Capacitancia de salida: 86 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: THINPAK8X8

Búsqueda de reemplazo de MOSFET IPL65R210CFD

IPL65R210CFD Datasheet (PDF)

..1. Size:1609K infineon
ipl65r210cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R210CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R210CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

7.1. Size:1614K infineon
ipl65r230c7.pdf

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8.1. Size:1801K infineon
ipl65r460cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R460CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R460CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

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ipl65r070c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R070C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R070C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

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ipl65r725cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R725CFDData SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R725CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

8.4. Size:1322K infineon
ipl65r1k0c6s.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K0C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K0C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

8.5. Size:1769K infineon
ipl65r195c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R195C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R195C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

8.6. Size:1337K infineon
ipl65r1k5c6s.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R1K5C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R1K5C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

8.7. Size:1601K infineon
ipl65r130c7.pdf

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8.8. Size:1748K infineon
ipl65r099c7.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPL65R099C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPL65R099C7ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

8.9. Size:1615K infineon
ipl65r165cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R165CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R165CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ

8.10. Size:1584K infineon
ipl65r420e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R420E6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R420E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

8.11. Size:1593K infineon
ipl65r310e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R310E6 Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R310E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

8.12. Size:1600K infineon
ipl65r190e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R190E6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R190E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

8.13. Size:1798K infineon
ipl65r340cfd.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V Thinpak650V CoolMOS CFD2 Power TransistorIPL65R340CFD Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPL65R340CFDThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ

8.14. Size:1593K infineon
ipl65r660e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS ThinkPAK 8x8650V CoolMOS E6 Power TransistorIPL65R660E6Data SheetRev. 2.1FinalIndustrial & Multimarket650V CoolMOS E6 Power TransistorIPL65R660E6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle

8.15. Size:1363K infineon
ipl65r650c6s.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPL65R650C6SData SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C6 Power TransistorIPL65R650C6SThinPAK 5x61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

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