IPL60R255P6 Todos los transistores

 

IPL60R255P6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPL60R255P6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 126 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 67 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.255 Ohm
   Paquete / Cubierta: THINPAK8X8
 

 Búsqueda de reemplazo de IPL60R255P6 MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPL60R255P6 Datasheet (PDF)

 ..1. Size:1618K  infineon
ipl60r255p6.pdf pdf_icon

IPL60R255P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R255P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R255P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.1. Size:1592K  infineon
ipl60r299cp.pdf pdf_icon

IPL60R255P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CP600V CoolMOS CP Power TransistorIPL60R299CP Data SheetRev. 2.0, 2010-10-01Final Industrial & Multimarket600V CoolMOS CP Power Transistor IPL60R299CP1 DescriptionThe CoolMOS CP series offers devices which provide all benefits of a fastswitching SJ MOSFET while not sacrificing ease of use. Extremely

 7.2. Size:1607K  infineon
ipl60r210p6.pdf pdf_icon

IPL60R255P6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPL60R210P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPL60R210P6ThinPAK 8x81 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

 7.3. Size:1239K  infineon
ipl60r225cfd7.pdf pdf_icon

IPL60R255P6

IPL60R225CFD7MOSFETThinPAK 8x8600V CoolMOS CFD7 Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications s

Otros transistores... IPL65R190E6 , IPL65R165CFD , IPL65R130C7 , IPL65R099C7 , IPL65R070C7 , IPL60R650P6S , IPL60R360P6S , IPL60R2K1C6S , 2N60 , IPL60R210P6 , IPL60R1K5C6S , IPL60R180P6 , IPI80N06S3-07 , IPI65R420CFD , IPI65R310CFD , IPI65R280E6 , IPI65R190E6 .

History: IPN50R1K4CE | SN6F22NSFP | SWD10N80K2 | SRT04N016L | RU40L10H | SRT045N012HTC-GS | STB23NM50N

 

 
Back to Top

 


 
.