IPL60R1K5C6S MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPL60R1K5C6S

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 16 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.5 Ohm

Encapsulados: THINPAK5X6

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IPL60R1K5C6S datasheet

 ..1. Size:1334K  infineon
ipl60r1k5c6s.pdf pdf_icon

IPL60R1K5C6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPL60R1K5C6S Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS C6 Power Transistor IPL60R1K5C6S ThinPAK 5x6 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle an

 7.1. Size:1597K  infineon
ipl60r199cp.pdf pdf_icon

IPL60R1K5C6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS CP Power Transistor IPL60R199CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS CP Power Transistor IPL60R199CP 1 Description The CoolMOS CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely

 7.2. Size:1325K  infineon
ipl60r185p7.pdf pdf_icon

IPL60R1K5C6S

IPL60R185P7 MOSFET ThinPAK 8x8 600V CoolMOS P7 Power Transistor The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOS

 7.3. Size:1634K  infineon
ipl60r180p6.pdf pdf_icon

IPL60R1K5C6S

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPL60R180P6 Data Sheet Rev. 2.0 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPL60R180P6 ThinPAK 8x8 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and

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