IPI65R310CFD Todos los transistores

 

IPI65R310CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPI65R310CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7.5 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: TO-262
 

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IPI65R310CFD Datasheet (PDF)

 ..1. Size:3925K  infineon
 ipa65r310cfd ipb65r310cfd ipi65r310cfd ipp65r310cfd ipw65r310cfd ipw65r310cfd ipb65r310cfd ipp65r310cfd ipa65r310cfd ipi65r310cfd.pdf pdf_icon

IPI65R310CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPx65R310CFD Data SheetRev. 2.3FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPW65R310CFD , IPB65R310CFD , IPP65R310CFDIPA65R310CFD , IPI65R310CFDTO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage

 ..2. Size:287K  inchange semiconductor
 ipi65r310cfd.pdf pdf_icon

IPI65R310CFD

isc N-Channel MOSFET Transistor IPI65R310CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.31Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while offeringan extremely fast and robust body diode

 7.1. Size:1905K  infineon
 ipi65r380c6.pdf pdf_icon

IPI65R310CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accord

 7.2. Size:1946K  infineon
 ipd65r380c6 ipi65r380c6 ipb65r380c6 ipp65r380c6 ipa65r380c6.pdf pdf_icon

IPI65R310CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Rev. 2.2, 2013-07-31Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MO

MOSTRAR MÁS

Otros transistores... IPL60R360P6S , IPL60R2K1C6S , IPL60R255P6 , IPL60R210P6 , IPL60R1K5C6S , IPL60R180P6 , IPI80N06S3-07 , IPI65R420CFD , K2611 , IPI65R280E6 , IPI65R190E6 , IPI65R190CFD , IPI65R190C6 , IPI65R150CFD , IPI65R110CFD , IPI65R099C6 , IPI14N03LA .

History: SWF7N65D | SNN3100L10Q | NP20P06SLG | JFPC2N80C | 2SK1589 | NCEP040N85G | STB3NK60Z

 

 
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