IPI04CN10N Todos los transistores

 ..1. Size:871K  infineon
 ipb04cn10ng ipi04cn10n ipp04cn10n.pdf

IPB04CN10N G IPI04CN10N G IPP04CN10N G 2 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E4

 ..2. Size:261K  inchange semiconductor
 ipi04cn10n.pdf

NCHANGE Semicon Iductor isc N-Channel MOSFET Transistor IPI04CN10N FEATURES Static drain-source on-resistance RDS(on) 3.9m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(

 0.1. Size:874K  infineon
 ipb04cn10ng ipi04cn10ng ipp04cn10ng ipp04cn10n .pdf

IPB04CN10N G IPI04CN10N G IPP04CN10N G 2 Power-Transistor Product Summary Features V 1 D R ( 492??6= ?@C>2= =6G6= R m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' D n) I 1 D R /6CJ =@H @? C6D DE2?46 R D n) R U @A6C2E ?8 E6>A6C2EFC6 R *3 7C66 =625 A=2E ?8 , @#- 4@>A= 2?E 1) R + F2= 7 65 244@C5 ?8 E@ % 7@C E2C86E 2AA= 42E @? R $562= 7@C 9 89 7C6BF6?4J DH E4

 9.1. Size:484K  infineon
 ipb037n06n3g ipi040n06n3g ipp040n06n3g.pdf

Type IPB037N06N3 G IPI040N06N3 G IPP040N06N3 G OptiMOS 3 Power-Transistor Product Summary Features V 60 V DS R 3.7 for sync. rectification, drives and dc/dc SMPS m DS(on),max (SMD) I 90 A Excellent gate charge x R product (FOM) D DS(on) previous engineering Very low on-resistance R DS(on) sample codes N-channel, normal level IPP04xN06N IPI04xN06N Ava

 9.2. Size:508K  infineon
 ipb038n12n3-g ipi041n12n3-g ipp041n12n3-g.pdf

IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features V 120 V DS N-channel, normal level R 3.8 m DS(on),max (TO-263) Excellent gate charge x R product (FOM) DS(on) I 120 A D Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to

 9.3. Size:746K  infineon
 ipb042n10n3-g ipi045n10n3-g ipp045n10n3-g ipb042n10n3ge8187.pdf

IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G 3 Power-Transistor Product Summary Features V 1 D Q ' 381>>5?B=1

 9.4. Size:873K  infineon
 ipi041n12n3g ipp041n12n3g ipb038n12n3g.pdf

IPI041N12N3 G IPP041N12N3 G IPB038N12N3 G OptiMOSTM3 Power-Transistor Product Summary Features VDS 120 V N-channel, normal level RDS(on),max (TO-263) 3.8 mW Excellent gate charge x R product (FOM) DS(on) ID 120 A Very low on-resistance R DS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant, halogen free Qualified according to JE

 9.5. Size:301K  infineon
 ipi04n03la.pdf

IPI04N03LA, IPP04N03LA OptiMOS 2 Power-Transistor Product Summary Features V 25 V DS Ideal for high-frequency dc/dc converters R 4.2 m DS(on),max Qualified according to JEDEC1) for target applications I 80 A D N-channel - Logic level Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on) PG-TO262-3 PG-TO220-3 Superior therma

 9.6. Size:287K  inchange semiconductor
 ipi041n12n3.pdf

isc N-Channel MOSFET Transistor IPI041N12N3 FEATURES Static drain-source on-resistance RDS(on) 4.1m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ideal for high-frequency switching and synchronous rectification ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYM