IPD65R950C6 Todos los transistores

 

IPD65R950C6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD65R950C6
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 37 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.2 nS
   Cossⓘ - Capacitancia de salida: 23 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
   Paquete / Cubierta: TO-252
 

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IPD65R950C6 Datasheet (PDF)

 ..1. Size:1734K  infineon
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IPD65R950C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R950C6 Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R950C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle and

 ..2. Size:242K  inchange semiconductor
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IPD65R950C6

isc N-Channel MOSFET Transistor IPD65R950C6,IIPD65R950C6FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 4.1. Size:1144K  infineon
ipd65r950cfd.pdf pdf_icon

IPD65R950C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPD65R950CFDData SheetRev. 2.0Rev. 2.1FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPD65R950CFDDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjunction (SJ) prin

 4.2. Size:242K  inchange semiconductor
ipd65r950cfd.pdf pdf_icon

IPD65R950C6

isc N-Channel MOSFET Transistor IPD65R950CFD,IIPD65R950CFDFEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

Otros transistores... IPF135N03LG , IPF050N03LG , IPDH6N03LAG , IPDH4N03LAG , IPD80R2K8CE , IPD80R1K4CE , IPD80R1K0CE , IPD65R950CFD , IRF3205 , IPD65R660CFDA , IPD65R420CFDA , IPD65R420CFD , IPD65R250E6 , IPD65R250C6 , IPD65R225C7 , IPD65R1K4CFD , IPD65R1K4C6 .

History: APT10045B2FLL | SM1A06NSK | WMK28N60C4 | ISZ0501NLS | TPC6201 | ME4542-G | IRFH7914TRPBF

 

 
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