IPD65R1K4CFD Todos los transistores

 

IPD65R1K4CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: IPD65R1K4CFD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 28.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 18 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
   Paquete / Cubierta: TO-252
 

 Búsqueda de reemplazo de IPD65R1K4CFD MOSFET

   - Selección ⓘ de transistores por parámetros

 

IPD65R1K4CFD Datasheet (PDF)

 ..1. Size:1133K  infineon
 ipd65r1k4cfd.pdf pdf_icon

IPD65R1K4CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CFD2 650V650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDData SheetRev. 2.0Rev. 2.1, 2013-07-31FinalIndustrial & Multimarket650V CoolMOS CFD2 Power TransistorIPD65R1K4CFDDPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs,designed according to the superjuncti

 ..2. Size:242K  inchange semiconductor
 ipd65r1k4cfd.pdf pdf_icon

IPD65R1K4CFD

isc N-Channel MOSFET Transistor IPD65R1K4CFD,IIPD65R1K4CFDFEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

 4.1. Size:1724K  infineon
 ipd65r1k4c6.pdf pdf_icon

IPD65R1K4CFD

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPD65R1K4C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPD65R1K4C6DPAK1 DescriptionCoolMOS is a revolutionary technology for high voltage powertabMOSFETs, designed according to the superjunction (SJ) principle andp

 4.2. Size:242K  inchange semiconductor
 ipd65r1k4c6.pdf pdf_icon

IPD65R1K4CFD

isc N-Channel MOSFET Transistor IPD65R1K4C6,IIPD65R1K4C6FEATURESStatic drain-source on-resistance:RDS(on)1.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingVery high commutation ruggednessABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

MOSTRAR MÁS

Otros transistores... IPD65R950CFD , IPD65R950C6 , IPD65R660CFDA , IPD65R420CFDA , IPD65R420CFD , IPD65R250E6 , IPD65R250C6 , IPD65R225C7 , IRF640 , IPD65R1K4C6 , IPD65R190C7 , IPD60R800CE , IPD60R650CE , IPD60R600P6 , IPD60R460CE , IPD60R400CE , IPD60R380P6 .

History: NCE6003 | 2SK1563

 

 
Back to Top

 


 
.