IPD50R500CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPD50R500CE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 57 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 5 nS
Cossⓘ - Capacitancia de salida: 31 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de IPD50R500CE MOSFET
- Selecciónⓘ de transistores por parámetros
IPD50R500CE datasheet
..1. Size:1046K infineon
ipd50r500ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R500CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R500CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
..2. Size:241K inchange semiconductor
ipd50r500ce.pdf
isc N-Channel MOSFET Transistor IPD50R500CE,IIPD50R500CE FEATURES Static drain-source on-resistance RDS(on) 500m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
7.1. Size:615K infineon
ipd50r520cp.pdf
Type IPD50R520CP CoolMOSTM Power Transistor Product Summary Product Summary Package V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI
7.2. Size:241K inchange semiconductor
ipd50r520cp.pdf
isc N-Channel MOSFET Transistor IPD50R520CP, IIPD50R520CP FEATURES Static drain-source on-resistance RDS(on) 520m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
8.1. Size:1624K 1
ipd50r1k4ce ipu50r1k4ce 50s1k4ce.pdf
IPD50R1K4CE, IPU50R1K4CE MOSFET DPAK IPAK 500V CoolMOS CE Power Transistor tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and 2 pioneered by Infineon Technologies. CoolMOS CE is a 1 1 2 3 3 price-performance optimized platform enabling to target cost sensitive applications in Consumer an
8.2. Size:2508K infineon
ipd50r2k0ce ipu50r2k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R2K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R2K0CE, IPU50R2K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
8.3. Size:1840K infineon
ipd50r380ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R380CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R380CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power tab MOSFETs, designed according to the superjunction (SJ) principle and p
8.4. Size:1057K infineon
ipd50r650ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R650CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R650CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
8.5. Size:2499K infineon
ipd50r950ce ipu50r950ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R950CE, IPU50R950CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
8.6. Size:751K infineon
ipd50r399cp.pdf
IPD50R399CP CoolMOSTM Power Transistor Product Summary Product Summary Features V"1 @Tjmax 550 V V"1 @Tjmax 550 V V *EL;HI
8.8. Size:2513K infineon
ipd50r3k0ce ipu50r3k0ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R3K0CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R3K0CE, IPU50R3K0CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
8.9. Size:1057K infineon
ipd50r800ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R800CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R800CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
8.10. Size:1044K infineon
ipd50r280ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPD50R280CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPD50R280CE DPAK 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by
8.11. Size:2492K infineon
ipd50r1k4ce ipu50r1k4ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R1K4CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPD50R1K4CE, IPU50R1K4CE DPAK IPAK 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunctio
8.12. Size:242K inchange semiconductor
ipd50r380ce.pdf
isc N-Channel MOSFET Transistor IPD50R380CE,IIPD50R380CE FEATURES Static drain-source on-resistance RDS(on) 380m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
8.13. Size:242K inchange semiconductor
ipd50r650ce.pdf
isc N-Channel MOSFET Transistor IPD50R650CE,IIPD50R650CE FEATURES Static drain-source on-resistance RDS(on) 650m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
8.14. Size:241K inchange semiconductor
ipd50r2k0ce.pdf
isc N-Channel MOSFET Transistor IPD50R2K0CE,IIPD50R2K0CE FEATURES Static drain-source on-resistance RDS(on) 2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V G
8.15. Size:242K inchange semiconductor
ipd50r399cp.pdf
isc N-Channel MOSFET Transistor IPD50R399CP,IIPD50R399CP FEATURES Static drain-source on-resistance RDS(on) 399m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
8.16. Size:242K inchange semiconductor
ipd50r1k4ce.pdf
isc N-Channel MOSFET Transistor IPD50R1K4CE,IIPD50R1K4CE FEATURES Static drain-source on-resistance RDS(on) 1.4 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V
8.17. Size:242K inchange semiconductor
ipd50r950ce.pdf
isc N-Channel MOSFET Transistor IPD50R950CE,IIPD50R950CE FEATURES Static drain-source on-resistance RDS(on) 0.95 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching Very high commutation ruggedness ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT
8.18. Size:241K inchange semiconductor
ipd50r3k0ce.pdf
isc N-Channel MOSFET Transistor IPD50R3K0CE,IIPD50R3K0CE FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V G
8.19. Size:242K inchange semiconductor
ipd50r800ce.pdf
isc N-Channel MOSFET Transistor IPD50R800CE,IIPD50R800CE FEATURES Static drain-source on-resistance RDS(on) 800m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
8.20. Size:242K inchange semiconductor
ipd50r280ce.pdf
isc N-Channel MOSFET Transistor IPD50R280CE,IIPD50R280CE FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Fast switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS
Otros transistores... IPD60R380P6, IPD60R380E6, IPD60R2K1CE, IPD60R1K5CE, IPD60R1K0CE, IPD50R950CE, IPD50R800CE, IPD50R650CE, 8205A, IPD50R3K0CE, IPD50R380CE, IPD50R2K0CE, IPD50R280CE, IPD50R1K4CE, IPD13N03LAG, IPD135N03L, IPD090N03L
