IRFP451 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP451
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 180 W
Tensión drenaje-fuente |Vds|: 450 V
Tensión compuerta-fuente |Vgs|: 20 V
Corriente continua de drenaje |Id|: 14 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente |Vgs(th)|: 4 V
Carga de compuerta (Qg): 120(max) nC
Tiempo de elevación (tr): 50(max) nS
Conductancia de drenaje-sustrato (Cd): 600(max) pF
Resistencia drenaje-fuente RDS(on): 0.4 Ohm
Empaquetado / Estuche: TO218
Búsqueda de reemplazo de MOSFET IRFP451
IRFP451 Datasheet (PDF)
..1. irfp450 irfp451 irfp452 irfp453-fi.pdf 
Size:489K _st
..2. irfp451.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP451FEATURESDrain Current I = 13A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
0.1. irfp450r irfp451r irfp452r irfp453r.pdf Size:204K _international_rectifier
8.1. irfw450 irfp450 irfp450fi.pdf Size:284K _1
8.2. irfp450pbf.pdf Size:878K _international_rectifier
PD - 94852IRFP450PbF Lead-Freewww.irf.com 111/17/03IRFP450PbF2 www.irf.comIRFP450PbFwww.irf.com 3IRFP450PbF4 www.irf.comIRFP450PbFwww.irf.com 5IRFP450PbF6 www.irf.comIRFP450PbFTO-247AC Package OutlineDimensions are shown in millimeters (inches)- D -3.65 (.143)5.30 (.209)15.90 (.626) 3.55 (.140)4.70 (.185)15.30 (.602)0.25 (.010) M D B M2
8.3. irfp450lc.pdf Size:159K _international_rectifier
PD - 9.1231IRFP450LCHEXFET Power MOSFETUltra Low Gate ChargeReduced Gate Drive RequirementVDSS = 500VEnhanced 30V Vgs RatingReduced Ciss, Coss, CrssRDS(on) = 0.40Isolated Central Mounting HoleDynamic dv/dt RatedRepetitive Avalanche Rated ID = 14ADescriptionThis new series of Low Charge HEXFET Power MOSFETs achieve significantlylower gate charge over conventional
8.4. auirfp4568-e.pdf Size:381K _international_rectifier
AUTOMOTIVE GRADEAUIRFP4568AUIRFP4568-EFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS 150Vl 175C Operating TemperatureRDS(on) typ.4.8ml Fast Switchingl Repetitive Avalanche Allowed up to Tjmax G max. 5.9ml Lead-Free, RoHS CompliantSID 171Al Automotive Qualified *DDescriptionDSpecif
8.5. irfp450n.pdf Size:121K _international_rectifier
PD- 94216SMPS MOSFETIRFP450NHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 500V 0.37 14Al High Speed Power SwitchingBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche Voltage and Cur
8.6. irfp450a.pdf Size:101K _international_rectifier
PD -91884SMPS MOSFETIRFP450AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40 14A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Current
8.7. irfp450apbf.pdf Size:195K _international_rectifier
PD -95054SMPS MOSFETIRFP450APbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply ( SMPS )l Uninterruptable Power Supply 500V 0.40 14Al High speed power switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in Simple Drive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance and Avala
8.8. irfp4568pbf.pdf Size:319K _international_rectifier
PD -96175IRFP4568PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.4.8ml High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 5.9mS ID (Silicon Limited) 171Benefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacit
8.9. irfp450.pdf Size:876K _international_rectifier
PD - 94852IRFP450PbF Lead-Free11/17/03Document Number: 91233 www.vishay.com1IRFP450PbFDocument Number: 91233 www.vishay.com2IRFP450PbFDocument Number: 91233 www.vishay.com3IRFP450PbFDocument Number: 91233 www.vishay.com4IRFP450PbFDocument Number: 91233 www.vishay.com5IRFP450PbFDocument Number: 91233 www.vishay.com6IRFP450PbFTO-247AC Package O
8.10. irfp450npbf.pdf Size:199K _international_rectifier
PD- 95663SMPS MOSFETIRFP450NPbFHEXFET Power MOSFETApplicationsVDSS Rds(on) max IDl Switch Mode Power Supply (SMPS)l Uninterruptible Power Supply 500V 0.37 14Al High Speed Power Switchingl Lead-FreeBenefitsl Low Gate Charge Qg results in SimpleDrive Requirementl Improved Gate, Avalanche and Dynamicdv/dt Ruggednessl Fully Characterized Capacitance andAvalanche
8.11. irfp450.pdf Size:276K _st
IRFP450N-CHANNEL 500V - 0.31 - 14A TO-247PowerMeshII MOSFETTYPE VDSS RDS(on) IDIRFP450 500V
8.12. irfp450b.pdf Size:729K _fairchild_semi
November 2001IRFP450B500V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 14A, 500V, RDS(on) = 0.39 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 87 nC)planar, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to Fast s
8.13. irfp450a.pdf Size:942K _samsung
Advanced Power MOSFETFEATURESBVDSS = 500 V Avalanche Rugged TechnologyRDS(on) = 0.4 Rugged Gate Oxide Technology Lower Input CapacitanceID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 (Typ.)1231.Gate 2. Drain 3. SourceAbsolute Maximum RatingsSymbol Characteristic Val
8.14. irfp450a sihfp450a.pdf Size:302K _vishay
IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu
8.15. irfp450n irfp450npbf.pdf Size:129K _vishay
IRFP450N, SiHFP450NVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementRoHS RDS(on) (Max.) ()VGS = 10 V 0.37 Improved Gate, Avalanche and Dynamic dV/dtCOMPLIANT RuggednessQg (Max.) (nC) 77 Fully Characterized Capacitance andQgs (nC) 26Avalanche Voltage and CurrentQgd (nC) 34 Effect
8.16. irfp450lc sihfp450lc.pdf Size:1566K _vishay
IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration
8.17. irfp450 sihfp450.pdf Size:1560K _vishay
IRFP450, SiHFP450Vishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) 500 Repetitive Avalanche Rated AvailableRDS(on) ()VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS*Qg (Max.) (nC) 150COMPLIANT Fast SwitchingQgs (nC) 20 Ease of ParallelingQgd (nC) 80 Simple Drive RequirementsConfiguration Single Lead (P
8.18. irfp450a sihfp450a.pdf Size:309K _infineon
IRFP450A, SiHFP450AVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Low Gate Charge Qg Results in Simple DriveVDS (V) 500RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dtRoHS*Qg (Max.) (nC) 64RuggednessCOMPLIANTQgs (nC) 16 Fully Characterized Capacitance andQgd (nC) 26Avalanche Voltage and CurrentConfigu
8.19. irfp450lc sihfp450lc.pdf Size:1570K _infineon
IRFP450LC, SiHFP450LCVishay Siliconix Power MOSFETFEATURESPRODUCT SUMMARY Ultra Low Gate ChargeVDS (V) 500 Reduced Gate Drive RequirementAvailableRDS(on) ()VGS = 10 V 0.40 Enhanced 30 V VGS RatingRoHS*Qg (Max.) (nC) 74 Reduced Ciss, Coss, CrssCOMPLIANTQgs (nC) 19 Isolated Central Mounting HoleQgd (nC) 35 Dynamic dV/dt RatedConfiguration
8.20. irfp4568pbf.pdf Size:319K _infineon
PD -96175IRFP4568PbFHEXFET Power MOSFETApplicationsl High Efficiency Synchronous Rectification in SMPSDVDSS150Vl Uninterruptible Power SupplyRDS(on) typ.4.8ml High Speed Power Switchingl Hard Switched and High Frequency Circuits Gmax. 5.9mS ID (Silicon Limited) 171Benefitsl Improved Gate, Avalanche and Dynamic dV/dtDRuggednessl Fully Characterized Capacit
8.21. auirfp4568.pdf Size:549K _infineon
AUIRFP4568 AUTOMOTIVE GRADE AUIRFP4568-E Features VDSS 150V Advanced Planar Technology RDS(on) typ. 4.8m Ultra Low On-Resistance Dynamic dv/dt Rating max. 5.9m 175C Operating Temperature ID 171A Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description S
8.22. irfp450.pdf Size:46K _ixys
IRFP 450 VDSS = 500 VStandard Power MOSFETID(cont) = 14 ARDS(on) = 0.40 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C14 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by
8.23. irfp4568.pdf Size:243K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP4568IIRFP4568FEATURESStatic drain-source on-resistance:RDS(on)5.9mEnhancement mode:Vth =3.0 to 5.0 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power Supply
8.24. irfp450r.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP450RFEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies
8.25. irfp452.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP452FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
8.26. irfp453.pdf Size:236K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRFP453FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V = 450V(Min)DSSStatic Drain-Source On-Resistance: R = 0.5(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies a
8.27. irfp4568pbf.pdf Size:213K _inchange_semiconductor
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IRFP4568PBFFEATURESWith TO-247packagingUninterruptible power supplyHigh speed switchingHard switched and high frequency circuits100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)
8.28. irfp450.pdf Size:213K _inchange_semiconductor
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP450FEATURESDrain Current I = 14A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)Fast Switching100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in swit
Otros transistores... IRFP441 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , 7N60 , IRFP452 , IRFP453 , IRFP460 , IRFP460A , IRFP460LC , IRFP470 , IRFP9130 , IRFP9131 .
