IRFP451 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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IRFP451 Datasheet (PDF)

1.1. irfp450r irfp451r irfp452r irfp453r.pdf Size:204K _upd-mosfet



1.2. irfp451.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor IRFP451 FEATURES ·Drain Current –I = 13A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

 4.1. irfp450pbf.pdf Size:878K _upd-mosfet

PD - 94852 IRFP450PbF • Lead-Free www.irf.com 1 11/17/03 IRFP450PbF 2 www.irf.com IRFP450PbF www.irf.com 3 IRFP450PbF 4 www.irf.com IRFP450PbF www.irf.com 5 IRFP450PbF 6 www.irf.com IRFP450PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

4.2. irfp450n irfp450npbf.pdf Size:129K _upd-mosfet

IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RoHS RDS(on) (Max.) (Ω)VGS = 10 V 0.37 • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Ruggedness Qg (Max.) (nC) 77 • Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 • Effect

 4.3. irfp450b.pdf Size:729K _upd-mosfet

November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 87 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast s

4.4. irfp450apbf.pdf Size:195K _upd-mosfet

PD -95054 SMPS MOSFET IRFP450APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40Ω 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

 4.5. irfp4568pbf.pdf Size:319K _upd-mosfet

PD -96175 IRFP4568PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 4.8m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 5.9m S ID (Silicon Limited) 171 Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacit

4.6. irfp450pbf.pdf Size:207K _update-mosfet

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP450PBF FEATURES ·Drain Current –I = 14A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.7. irfp450r.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor IRFP450R FEATURES ·Drain Current –I = 14A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies

4.8. irfp452.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor IRFP452 FEATURES ·Drain Current –I = 12A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.5Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

4.9. irfp453.pdf Size:236K _update-mosfet

isc N-Channel MOSFET Transistor IRFP453 FEATURES ·Drain Current –I = 12A@ T =25℃ D C ·Drain Source Voltage- : V = 450V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.5Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies a

4.10. irfp450.pdf Size:276K _st

IRFP450 N-CHANNEL 500V - 0.31? - 14A TO-247 PowerMesh�II MOSFET TYPE VDSS RDS(on) ID IRFP450 500V < 0.38? 14 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESH�II is the evolution of the first generation of MESH OVERLAY�. The layout re- finements introduced grea

4.11. irfp450-1-2-3-fi.pdf Size:489K _st2

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4.12. irfp450lc.pdf Size:159K _international_rectifier

PD - 9.1231 IRFP450LC HEXFET� Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

4.13. auirfp4568-e.pdf Size:381K _international_rectifier

AUTOMOTIVE GRADE AUIRFP4568 AUIRFP4568-E Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS 150V l 175°C Operating Temperature RDS(on) typ.4.8mΩ l Fast Switching l Repetitive Avalanche Allowed up to Tjmax G max. 5.9mΩ l Lead-Free, RoHS Compliant S ID 171A l Automotive Qualified * D Description D Specif

4.14. irfp450n.pdf Size:121K _international_rectifier

PD- 94216 SMPS MOSFET IRFP450N HEXFET� Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current

4.15. irfp450a.pdf Size:101K _international_rectifier

PD -91884 SMPS MOSFET IRFP450A HEXFET� Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40? 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

4.16. irfp450apbf.pdf Size:224K _international_rectifier

PD -95054 SMPS MOSFET IRFP450APbF HEXFET� Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40? 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

4.17. irfp450.pdf Size:876K _international_rectifier

PD - 94852 IRFP450PbF � Lead-Free 11/17/03 Document Number: 91233 www.vishay.com 1 IRFP450PbF Document Number: 91233 www.vishay.com 2 IRFP450PbF Document Number: 91233 www.vishay.com 3 IRFP450PbF Document Number: 91233 www.vishay.com 4 IRFP450PbF Document Number: 91233 www.vishay.com 5 IRFP450PbF Document Number: 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package Outlin

4.18. irfp450npbf.pdf Size:199K _international_rectifier

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET� Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volta

4.19. irfp450a.pdf Size:942K _samsung

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 �A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

4.20. irfp450a sihfp450a.pdf Size:302K _vishay

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.40 � Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 � Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configuration Sin

4.21. irfp450lc sihfp450lc.pdf Size:1566K _vishay

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Ultra Low Gate Charge VDS (V) 500 � Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.40 � Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 � Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 � Isolated Central Mounting Hole Qgd (nC) 35 � Dynamic dV/dt Rated Configuration Single � Repeti

4.22. irfp450 sihfp450.pdf Size:1560K _vishay

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) 500 � Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 � Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT � Fast Switching Qgs (nC) 20 � Ease of Paralleling Qgd (nC) 80 � Simple Drive Requirements Configuration Single � Lead (Pb)-free Available

4.23. irfp450.pdf Size:46K _ixys

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A ? RDS(on) = 0.40 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25�C to 150�C 500 V VDGR TJ = 25�C to 150�C; RGS = 1 M? 500 V VGS Continuous �20 V D (TAB) VGSM Transient �30 V ID25 TC = 25�C14 A G = Gate, D = Drain, IDM TC = 25�C, pulse width limited by TJM 56 A S = Source, T

4.24. irfp4568.pdf Size:243K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRFP4568，IIRFP4568 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤5.9mΩ ·Enhancement mode: Vth =3.0 to 5.0 V (VDS=VGS, ID=250μA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High Efficiency Synchronous Rectification in SMPS ·Uninterruptible Power Supply ·

4.25. irfp4568pbf.pdf Size:213K _inchange_semiconductor

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IRFP4568PBF ·FEATURES ·With TO-247packaging ·Uninterruptible power supply ·High speed switching ·Hard switched and high frequency circuits ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃)

4.26. irfp450.pdf Size:213K _inchange_semiconductor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP450 FEATURES ·Drain Current –I = 14A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.4Ω(Max) DS(on) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in swit

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