IPA65R065C7 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA65R065C7
Código: 65C7065
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 34 W
Voltaje máximo drenador - fuente |Vds|: 650 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 15 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Tiempo de subida (tr): 14 nS
Conductancia de drenaje-sustrato (Cd): 48 pF
Resistencia entre drenaje y fuente RDS(on): 0.065 Ohm
Paquete / Cubierta: TO-220F
Búsqueda de reemplazo de MOSFET IPA65R065C7
IPA65R065C7 Datasheet (PDF)
ipa65r065c7.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R065C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R065C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa65r065c7.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R065C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa65r095c7.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R095C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R095C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 650V 650V CoolMOS C6 Power TransistorIPx65R099C6Data SheetRev. 2.0FinalIndustrial & Multimarket650V CoolMOS C6 Power TransistorIPW65R099C6, IPB65R099C6, IPP65R099C6IPA65R099C6, IPI65R099C6TO-247 DPAK TO-2201 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs
ipa65r045c7.pdf
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MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7650V CoolMOS C7 Power TransistorIPA65R045C7Data SheetRev. 2.0FinalPower Management & Multimarket650V CoolMOS C7 Power TransistorIPA65R045C7TO-220 FP1 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andp
ipa65r095c7.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R095C7FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
ipa65r045c7.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R045C7FEATURESWith To-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT
ipa65r099c6.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA65R099C6FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME
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