IPA60R800CE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R800CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R800CE, IPA60R800CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

IPD60R800CE, IPA60R800CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R800CEFEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

IPA60R360P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MO

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPA60R180C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPA60R180C7TO-220 FP1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct

IPD60R650CE, IPA60R650CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principlea

IPA60R280CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

IPA60R199CPCoolMOS Power TransistorProduct SummaryFeaturesV @ Tj,max 650 VDS Lowest figure-of-merit RONxQgR @T = 25C 0.199DS(on),max j Ultra low gate chargeQ 32 nCg,typ Extreme dv/dt rated High peak current capabilityPG-TO220 Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantCoolMOS CP is desi

IPA60R360P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

IPA60R099C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R400CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R400CE, IPA60R400CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R600C6Data SheetRev. 2.5FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R600C6, IPB60R600C6IPP60R600C6, IPA60R600C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the super

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R600E6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6IPA60R600E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) pri

IPD60R460CE, IPA60R460CEMOSFETDPAK PG-TO 220 FP600V CoolMOS CE Power TransistortabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Ligh

IPA60R360CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

IPA60R1K5CEMOSFETTO-220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting hig

IPD60R400CE, IPS60R400CE, IPA60R400CEMOSFETDPAK IPAK SL PG-TO 220 FP600V CoolMOS CE Power TransistortabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and2pioneered by Infineon Technologies. CoolMOS CE is a 13price-performance optimized platform enabling to target cost sensitiveapplica

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPP60R280P6, IPA60R280P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

IPA60R210CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R650CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R650CE, IPA60R650CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descriptint bC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t eexpeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti nl e m ke it in

IPA60R145CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

IPA60R600CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 U )DK:GH ;>H / L .ON g 1j X 0.6 !0 DC B6L U 2 AHF6 ADK HMU . I6A>;>:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound ;;8

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R190E6Data SheetRev. 2.0, 2010-05-03FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6IPW60R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R380E6, IPA60R380E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle an

MOSFET+ =L9D - PA

IPA60R360P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ M

IPA60R600P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R600E6Data SheetRev. 2.0, 2010-04-12FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPD60R600E6, IPP60R600E6IPD60R600E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)

IPA60R125CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 V 4DGA9L>9: 7:HI / >C 1, #JAAE6@DS on Y 0.125 DS(on) max jV 2 AIG6 ADL INV . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound

IPA60R120P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R450E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS E6 Pwer Transistr IPD60R450E6, IPP60R450E6IPA60R450E61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superjunction (S )

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPP60R190P6, IPA60R190P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R330P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R330P6, IPB60R330P6, IPP60R330P6,IPA60R330P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPP60R230P6, IPA60R230P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

IPA60R199CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures @ Tj max 650 V!0 V )DL:HI ;>I / xQgON Y 0.199 DS(on) max jV 2 AIG6 ADL INPGTO220V . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound ;;8

IPA60R099P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R099P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R099P6, IPP60R099P6, IPA60R099P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) pri

MOSFET+ =L9D - PA

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPB60R160P6, IPP60R160P6,IPA60R160P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS CE600V CoolMOS CE Power TransistorIPx60R460CEData SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS CE Power TransistorIPD60R460CE, IPA60R460CEDPAK TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunctio

IPA60R520CPCIMOSTM $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 U )DK:GH ;>H / L .ON g 1? X 0.520 W!0 DC B6L U 2 AHF6 ADK HMU . I6A>;>:9 for industrial grade applications 688DF9>CC6CH; Halogen free mold compound-$ 1, #-

IPA60R299CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 V )DL:HI ;>I / xQgON Y 0.299 DS(on) max jV 2 AIG6 ADL INV . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R380P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R380P6, IPA60R380P6, IPD60R380P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

IPA60R125CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPB60R600P6, IPP60R600P6, IPA60R600P6,IPD60R600P6DPAK TO-220 TO-220 FP1 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFET

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R600P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPP60R600P6, IPA60R600P6, IPD60R600P6TO-220 TO-220 FP DPAK1 Descriptiontab tabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accor

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R230P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R230P6, IPB60R230P6, IPP60R230P6,IPA60R230P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

IPA60R1K0CEMOSFETTO-220 FP600V CoolMOS CE Power TransistorCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. CoolMOS CE is aprice-performance optimized platform enabling to target cost sensitiveapplications in Consumer and Lighting markets by still meeting hig

IPA60R060P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

IPA60R180P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

IPA60R280P7SMOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFE

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C7600V CoolMOS C7 Power TransistorIPA60R120C7Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS C7 Power TransistorIPA60R120C7TO-220 FP1 DescriptionCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and

IPB60R600P6, IPP60R600P6, IPD60R600P6,IPA60R600P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to

IPA60R165CPCoolMOS Power TransistorProduct SummaryFeaturesV 1j max 650 V!0 V )DL:HI ;>I / xQgONR @T Y 0.165 DS(on) max jV 2 AIG6 ADL INV . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compoundPGTO220

IPA60R180P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPB60R190P6, IPP60R190P6,IPA60R190P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

IPA60R280P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPB60R280P6, IPP60R280P6,IPA60R280P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R520E6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R520E6, IPA60R520E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principleand p

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R950C6Data SheetRev. 2.4FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the sup

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R330P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R330P6, IPP60R330P6, IPA60R330P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

IPA60R080P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R099C6 Data SheetRev. 2.1, 2010-02-09Final Industrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R099C6, IPB60R099C6IPP60R099C6 IPW60R099C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

IPA60R170CFD7MOSFETPG-TO 220 FP600V CoolMOS CFD7 Power DeviceCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies. The latest CoolMOS CFD7 is thesuccessor to the CoolMOS CFD2 series and is an optimized platformtailored to target soft switching applications such

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R125C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R125C6, IPB60R125C6IPP60R125C6 IPW60R125C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according to the superj

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R380C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPD60R380C6, IPI60R380C6IPB60R380C6, IPP60R380C6IPA60R380C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

IPA60R600P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MO

IPA60R385CPCoolMOS Power TransistorProduct SummaryFeaturesV 1j max 650 VDSV )DL:HI ;>I / M .ON GR @T Y 0. 85 DS(on) max jV 2 AIG6 ADL IN1)V . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold comp

IPA60R160P7MOSFETPG-TO 220 FP600V CoolMOS P7 Power DeviceThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET

MOSFET+ =L9D - PA

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R125P6Data SheetRev. 2.0FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R125P6, IPP60R125P6, IPA60R125P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

IPB60R380P6, IPP60R380P6, IPD60R380P6,IPA60R380P6MOSFETDPAK PG-TO 220 DPAK600V CoolMOS P6 Power Transistortab tabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle and22pioneered by Infineon Technologies. CoolMOS P6 series combines the 1 133experience of the leading SJ MOSFET suppli

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPP60R160P6, IPA60R160P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi

IPA60R180C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

IPA60R250CPCIMOS $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 1j max 650 V!0 V )DL:HI ;>I / xQgON Y 0.250 WDS(on) max jV 2 AIG6 ADL IN-$ 1, #-V . J6A>;>:9 for industrial grade applications 688DG9>CC6CI; Halogen free mold compound ;;

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R950C6 Data SheetRev. 2.1, 2010-03-11FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPD60R950C6, IPB60R950C6IPP60R950C6, IPA60R950C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the supe

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R380E6Data SheetRev. 2.6FinalPower Management & Multimarket C lMO e n i t I I I D O O D 1 Descriptint b tabC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n 2pi neee b In ine n e n l ie C

IPA60R060C7MOSFETPG-TO 220 FP600V CoolMOS C7 Power DeviceCoolMOS C7 is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) principle andpioneered by Infineon Technologies.600V CoolMOS C7 series combines the experience of the leading SJMOSFET supplier with high class innovation.The 600V C7 is the first technology ever w

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R280C6Data SheetRev. 2.2FinalPower Management & Multimarket600V CIMOS C6 Pwer Transistr IPA60R280C6, IPB60R280C6IPI60R280C6, IPP60R280C6IPW60R280C61 DescriptinCoolMOS is a revolutionary technology for high voltage powerMOSFETs designed according

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R280P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R520E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R280CFD7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATI

isc N-Channel MOSFET Transistor IPA60R199CP, IIPA60R199CPFEATURESStatic drain-source on-resistance:RDS(on) 0.199High peak current capabilityEnhancement mode100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHard switching SMPS topologiesABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

isc N-Channel MOSFET Transistor IPA60R360P7FEATURES Drain-source on-resistance:RDS(on) 0.36Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R1K5CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA60R160C6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R190P6FEATURESDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R650CEFEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.65(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R190E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R380E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R160P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600E6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IPA60R120P7FEATURES Drain-source on-resistance:RDS(on) 0.12Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh switching Power SupplyABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600P6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R460CEFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R400CEFEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600C6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R280C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAM

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R520CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R299CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R520C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R1K0CEFEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

isc N-Channel MOSFET Transistor IPA60R060P7FEATURESDrain Current : I = 48A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 60m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R120C7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R165CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R099C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R280P7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA60R190C6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapte

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R125C6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R170CFD7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATI

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R330P6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.33(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPA60R380C6FEATURESWith TO-220F packagingHigh speed switchingVery high commutation ruggednessEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationzAPPLICATIONSPFC stages, hard switching PWM stages and resonant switchingPC Silverbox, Adapte

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R600P7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IPA60R280E6IIPA60R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R385CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

isc N-Channel MOSFET Transistor IPA60R125P6,IIPA60R125P6FEATURESDrain-source on-resistance:RDS(on) 0.125 (max)Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIt is intended for general purpose switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R230P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R450E6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R180C7FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R250CPFEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R950C6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.95(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R099P6FEATURESWith TO-220F packageLow input capacitance and gate chargeLow gate input resistanceReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATING

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor IPA60R750E6FEATURESWith TO-220F PackageDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.75(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T