IPA60R160P6 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IPA60R160P6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7.6 nS

Cossⓘ - Capacitancia de salida: 89 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm

Encapsulados: TO-220F

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IPA60R160P6 datasheet

 ..1. Size:2645K  infineon
ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf pdf_icon

IPA60R160P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.2 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPB60R160P6, IPP60R160P6, IPA60R160P6 TO-247 D PAK TO-220 1 Description tab tab CoolMOS is a revolutionary technology for high voltage power MOSFETs,

 ..2. Size:2909K  infineon
ipa60r160p6 ipp60r160p6 ipw60r160p6.pdf pdf_icon

IPA60R160P6

MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS P6 600V CoolMOS P6 Power Transistor IPx60R160P6 Data Sheet Rev. 2.1 Final Power Management & Multimarket 600V CoolMOS P6 Power Transistor IPW60R160P6, IPP60R160P6, IPA60R160P6 TO-247 TO-220 TO-220 FP 1 Description tab CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed accordi

 ..3. Size:223K  inchange semiconductor
ipa60r160p6.pdf pdf_icon

IPA60R160P6

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA60R160P6 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING

 4.1. Size:1102K  infineon
ipa60r160p7.pdf pdf_icon

IPA60R160P6

IPA60R160P7 MOSFET PG-TO 220 FP 600V CoolMOS P7 Power Device The CoolMOS 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 series is the successor to the CoolMOS P6 series. It combines the benefits of a fast switching SJ MOSFET

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