IPA50R500CE MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IPA50R500CE
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 28 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 5 nS
Cossⓘ - Capacitancia de salida: 31 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.5 Ohm
Encapsulados: TO-220F
Búsqueda de reemplazo de IPA50R500CE MOSFET
- Selecciónⓘ de transistores por parámetros
IPA50R500CE datasheet
..1. Size:1327K infineon
ipa50r500ce.pdf 
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R500CE Data Sheet Rev. 2.0 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R500CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
..2. Size:201K inchange semiconductor
ipa50r500ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R500CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
7.1. Size:546K infineon
ipa50r520cp.pdf
Type IPA50R520CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Package @Tjmax 550 V "1 W *EM;IJ
7.2. Size:200K inchange semiconductor
ipa50r520cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R520CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.1. Size:1347K infineon
ipa50r950ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R950CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R950CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
8.2. Size:2210K infineon
ipa50r190ce ipp50r190ce ipw50r190ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R190CE Data Sheet Rev. 2.0 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPW50R190CE, IPP50R190CE, IPA50R190CE TO-247 TO-220 TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the s
8.3. Size:1342K infineon
ipa50r650ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R650CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R650CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
8.4. Size:604K infineon
ipa50r140cp.pdf
IPA50R140CP CoolMOSTM Power Transistor Product Summary Features V @Tjmax 550 V !0 W 4EHB M? ; 8;IJ / ?D 1, DS(on) R 0.140 DS(on) max W )EM;IJ
8.5. Size:578K infineon
ipa50r350cp.pdf
IPA50R350CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . , + g 0. 50 DS(on) max V 2 AIG6 ADL IN V -7 ;G A 69 EA6I>C6CI 1, #JAA - ( 0) V . J6iified 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C
8.6. Size:561K infineon
ipa50r399cp.pdf
IPA50R399CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 0) 1, #JAA - ( V . J6Ai;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C
8.7. Size:1351K infineon
ipa50r800ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R800CE Data Sheet Rev. 2.1 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R800CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
8.9. Size:1356K infineon
ipa50r280ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPA50R280CE Data Sheet Rev. 2.2 Final Power Management & Multimarket 500V CoolMOS CE Power Transistor IPA50R280CE TO-220 FP 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and p
8.10. Size:971K infineon
ipa50r190ce.pdf
IPA50R190CE MOSFET PG-TO 220 FP 500V CoolMOS CE Power Transistor CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in Consumer and Lighting markets by still meeting h
8.11. Size:552K infineon
ipa50r299cp.pdf
IPA50R299CP C IMOSTM $;B1= '=- >5>?;= $=;0@/? &@99-=D Features @Tjmax 550 V !0 V )DL HI ;>I / M . C6CI 1, #- 0) V . J6>A;> 9 688DG9>C 01>53 10 2;= V %6G9 6C9 HD;IHL>I8=>C
8.13. Size:2917K infineon
ipa50r380ce.pdf
MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CE 500V CoolMOS CE Power Transistor IPx50R380CE Data Sheet Rev. 2.0, 2010-08-27 Final Industrial & Multimarket 500V CoolMOS CE Power Transistor IPP50R380CE, IPA50R380CE IPI50R380CE 1 Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (S
8.14. Size:201K inchange semiconductor
ipa50r950ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R950CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.15. Size:201K inchange semiconductor
ipa50r650ce.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPA50R650CE FEATURES With TO-220F packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA
8.16. Size:200K inchange semiconductor
ipa50r140cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R140CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.17. Size:200K inchange semiconductor
ipa50r350cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R350CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.18. Size:201K inchange semiconductor
ipa50r399cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R399CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.19. Size:201K inchange semiconductor
ipa50r800ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R800CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.20. Size:201K inchange semiconductor
ipa50r199cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R199CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.21. Size:201K inchange semiconductor
ipa50r280ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R280CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.22. Size:201K inchange semiconductor
ipa50r190ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R190CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.23. Size:201K inchange semiconductor
ipa50r299cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R299CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.24. Size:201K inchange semiconductor
ipa50r250cp.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R250CP FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
8.25. Size:201K inchange semiconductor
ipa50r380ce.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor IPA50R380CE FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATING
Otros transistores... IPA60R230P6, IPA60R190P6, IPA60R160P6, IPA60R125P6, IPA60R099P6, IPA50R950CE, IPA50R800CE, IPA50R650CE, AON7410, IPA50R280CE, IPA50R190CE, IPA105N15N3, IPA083N10N5, IPA075N15N3, IPA060N06N, IPA041N04NG, IPA040N06N
