IRFP4332PBF Todos los transistores

 ..1. Size:298K  international rectifier
 irfp4332pbf.pdf

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 C and Pass Switch Applications l Low QG for

 6.1. Size:242K  inchange semiconductor
 irfp4332.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4332 IIRFP4332 FEATURES Static drain-source on-resistance RDS(on) 33m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Repetitive Peak Current Capability for Reliable Operation Short fall & Rise Times For Fast Swi

 8.1. Size:291K  international rectifier
 irfp4321pbf.pdf

PD - 97106 IRFP4321PbF HEXFET Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m RDS(on) typ. Benefits max. 15.5m l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

 8.2. Size:299K  international rectifier
 irfp4310zpbf.pdf

PD - 97123A IRFP4310ZPbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

 8.3. Size:277K  international rectifier
 irfp4368pbf.pdf

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46m l Hard Switched and High Frequency Circuits max. 1.85m G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

 8.4. Size:676K  international rectifier
 auirfp4310z.pdf

AUTOMOTIVE GRADE AUIRFP4310Z Features VDSS 100V Advanced Process Technology RDS(on) typ. 4.8m Ultra Low On-Resistance max. Dynamic dv/dt Rating 6.0m 175 C Operating Temperature ID (Silicon Limited) 128A Fast Switching ID (Package Limited) 120A Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant D Autom

 8.5. Size:345K  samsung
 irfp430-433 irf830-833.pdf

 8.6. Size:243K  inchange semiconductor
 irfp4321.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4321 IIRFP4321 FEATURES Static drain-source on-resistance RDS(on) 15.5m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Motion Control Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible

 8.7. Size:244K  inchange semiconductor
 irfp4368.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4368 IIRFP4368 FEATURES Static drain-source on-resistance RDS(on) 1.85m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninter

 8.8. Size:244K  inchange semiconductor
 irfp4310z.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4310Z IIRFP4310Z FEATURES Static drain-source on-resistance RDS(on) 6.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Unin