IRFP449 Todos los transistores

PD - 94899 IRFP448PbF Lead-Free 12/18/03 Document Number 91229 www.vishay.com 1 IRFP448PbF Document Number 91229 www.vishay.com 2 IRFP448PbF Document Number 91229 www.vishay.com 3 IRFP448PbF Document Number 91229 www.vishay.com 4 IRFP448PbF Document Number 91229 www.vishay.com 5 IRFP448PbF Document Number 91229 www.vishay.com 6 IRFP448PbF TO-247AC Package O

PD -97134 IRFP4468PbF HEXFET Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m l Uninterruptible Power Supply l High Speed Power Switching max. 2.6m l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 290A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ru

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

PD - 97309A IRFP4410ZPbF HEXFET Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m l High Speed Power Switching max. 9.0m l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number 91228 www.vishay.com 1 IRFP440PbF Document Number 91228 www.vishay.com 2 IRFP440PbF Document Number 91228 www.vishay.com 3 IRFP440PbF Document Number 91228 www.vishay.com 4 IRFP440PbF Document Number 91228 www.vishay.com 5 IRFP440PbF Document Number 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Ou

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic V

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) ( )VGS = 10 V 0.85 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Lead (Pb

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Complian

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Lead

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compli

AUTOMOTIVE GRADE AUIRFP4409 HEXFET Power MOSFET Features Advanced Process Technology D VDSS 300V Low On-Resistance 175 C Operating Temperature RDS(on) typ. 56m Fast Switching G 69m max Repetitive Avalanche Allowed up to Tjmax S Lead-Free, RoHS Compliant ID 38A Automotive Qualified * Description Specifical

IRFP4468 Thunder High Power Products Silicon N-Channel Power MOSFET FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP4468 IIRFP4468 FEATURES Static drain-source on-resistance RDS(on) 2.6m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterr

isc N-Channel MOSFET Transistor IRFP442R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

isc N-Channel MOSFET Transistor IRFP440A FEATURES Drain Current I = 8.5A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplie

isc N-Channel MOSFET Transistor IRFP443R FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.1 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies a

isc N-Channel MOSFET Transistor IRFP4410Z IIRFP4410Z FEATURES Static drain-source on-resistance RDS(on) 9.0m Enhancement mode Vth =2.0 to 4.0 V (VDS=VGS, ID=250 A) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply

isc N-Channel MOSFET Transistor IRFP441R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 450V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies

isc N-Channel MOSFET Transistor IRFP440R FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies