IRFP9141 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP9141

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 19 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Empaquetado / Estuche: TO3P

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IRFP9141 Datasheet (PDF)

3.1. irfp9140npbf.pdf Size:236K _upd-mosfet

PD - 95665 IRFP9140NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117Ω l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re

3.2. irfp9140pbf.pdf Size:1478K _upd-mosfet

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • Isolated Central Mounting Hole Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Fast Switching Configuration Single • Ease of

3.3. irfp9140.pdf Size:165K _international_rectifier

3.4. irfp9140n.pdf Size:142K _international_rectifier

PD - 9.1492A IRFP9140N PRELIMINARY HEXFET� Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175�C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s

3.5. irfp9140pbf.pdf Size:1757K _international_rectifier

PD-95991 IRFP9140PbF � Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recover

3.6. irfp9140-43 irf9540-43.pdf Size:378K _samsung

3.7. irfp9140 sihfp9140.pdf Size:1444K _vishay

IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY � Dynamic dV/dt Rating VDS (V) - 100 � Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS � P-Channel COMPLIANT Qg (Max.) (nC) 61 � Isolated Central Mounting Hole Qgs (nC) 14 � 175 �C Operating Temperature Qgd (nC) 29 � Fast Switching Configuration Single � Ease of Paralleling S � Lead (Pb)-

3.8. irfp9140n.pdf Size:241K _inchange_semiconductor

isc P-Channel MOSFET Transistor IRFP9140N，IIRFP9140N ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.117Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRIPTION ·Combine with the fast switching speed and ruggedized device design,provide the designer with an extremely efficient and

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