IRFP9141 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP9141
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 125 W
Tensión drenaje-fuente (Vds): 60 V
Corriente continua de drenaje (Id): 19 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Resistencia drenaje-fuente RDS(on): 0.2 Ohm
Empaquetado / Estuche: TO3P
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IRFP9141 Datasheet (PDF)
3.1. irfp9140pbf.pdf 
Size:1478K _upd-mosfet
IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) - 100 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = - 10 V 0.20 RoHS* • P-Channel COMPLIANT Qg (Max.) (nC) 61 • Isolated Central Mounting Hole Qgs (nC) 14 • 175 °C Operating Temperature Qgd (nC) 29 • Fast Switching Configuration Single • Ease of
3.2. irfp9140npbf.pdf Size:236K _upd-mosfet
PD - 95665 IRFP9140NPbF HEXFET® Power MOSFET l Advanced Process Technology l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = -100V l P-Channel l Fast Switching RDS(on) = 0.117Ω l Fully Avalanche Rated G l Lead-Free ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-re
3.3. irfp9140.pdf Size:165K _international_rectifier
3.4. irfp9140pbf.pdf Size:1757K _international_rectifier
PD-95991 IRFP9140PbF Lead-Free 12/22/04 Document Number: 91238 www.vishay.com 1 IRFP9140PbF Document Number: 91238 www.vishay.com 2 IRFP9140PbF Document Number: 91238 www.vishay.com 3 IRFP9140PbF Document Number: 91238 www.vishay.com 4 IRFP9140PbF Document Number: 91238 www.vishay.com 5 IRFP9140PbF Document Number: 91238 www.vishay.com 6 IRFP9140PbF Peak Diode Recover
3.5. irfp9140n.pdf Size:142K _international_rectifier
PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = -100V 175C Operating Temperature P-Channel RDS(on) = 0.117? Fast Switching G Fully Avalanche Rated ID = -23A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per s
3.6. irfp9140-43 irf9540-43.pdf Size:378K _samsung
3.7. irfp9140 sihfp9140.pdf Size:1444K _vishay
IRFP9140, SiHFP9140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Repetitive Avalanche Rated RDS(on) (?)VGS = - 10 V 0.20 RoHS P-Channel COMPLIANT Qg (Max.) (nC) 61 Isolated Central Mounting Hole Qgs (nC) 14 175 C Operating Temperature Qgd (nC) 29 Fast Switching Configuration Single Ease of Paralleling S Lead (Pb)-
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
