IRFP460APBF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRFP460APBF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 280 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 55 nS
Cossⓘ - Capacitancia de salida: 480 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm
Encapsulados: TO247AC
Búsqueda de reemplazo de IRFP460APBF MOSFET
- Selecciónⓘ de transistores por parámetros
IRFP460APBF datasheet
irfp460apbf.pdf
PD- 94853 SMPS MOSFET IRFP460APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanc
irfp460apbf.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP460APBF FEATURES With TO-247 packaging Uninterruptible power supply High speed switching 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-So
irfp460as.pdf
PD-94011A SMPS MOSFET IRFP460AS HEXFET Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third
irfp460a.pdf
PD- 91880 SMPS MOSFET IRFP460A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current
Otros transistores... IRFP450N, IRFP450NPBF, IRFP450PBF, IRFP450R, IRFP451R, IRFP452R, IRFP453R, IRFP4568PBF, IRLB3034, IRFP460B, IRFP460C, IRFP460LCPBF, IRFP460N, IRFP460NPBF, IRFP460P, IRFP460PBF, IRFP462
History: BLM07N20-C | SVF1N60N
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
Popular searches
mpsu06 | кт630 | 2g381 transistor | 2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf | c2274 transistor | c5200 2sc5200 transistor datasheet
