IRFP460LCPBF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP460LCPBF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 280 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 77 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.27 Ohm

Encapsulados: TO247AC

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IRFP460LCPBF datasheet

 ..1. Size:205K  international rectifier
irfp460lcpbf.pdf pdf_icon

IRFP460LCPBF

PD - 94902 IRFP460LCPbF Lead-Free 12/19/03 Document Number 91235 www.vishay.com 1 IRFP460LCPbF Document Number 91235 www.vishay.com 2 IRFP460LCPbF Document Number 91235 www.vishay.com 3 IRFP460LCPbF Document Number 91235 www.vishay.com 4 IRFP460LCPbF Document Number 91235 www.vishay.com 5 IRFP460LCPbF Document Number 91235 www.vishay.com 6 IRFP460LCPbF Docu

 5.1. Size:154K  international rectifier
irfp460lc.pdf pdf_icon

IRFP460LCPBF

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27 Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional

 5.2. Size:1124K  vishay
irfp460lc sihfp460lc.pdf pdf_icon

IRFP460LCPBF

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

 5.3. Size:1133K  infineon
irfp460lc sihfp460lc.pdf pdf_icon

IRFP460LCPBF

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuratio

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