IRFP460PBF Todos los transistores

 

IRFP460PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP460PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 280 W

Tensión drenaje-fuente (Vds): 500 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 20 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 210 nC

Tiempo de elevación (tr): 59 nS

Conductancia de drenaje-sustrato (Cd): 870 pF

Resistencia drenaje-fuente RDS(on): 0.27 Ohm

Empaquetado / Estuche: TO247

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IRFP460PBF Datasheet (PDF)

1.1. irfp460pbf.pdf Size:156K _upd-mosfet

IRFP460PBF
IRFP460PBF

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.27 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 29 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Le

2.1. irfp460p.pdf Size:154K _upd-mosfet

IRFP460PBF
IRFP460PBF

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET® Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27Ω G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of f

2.2. irfp460p.pdf Size:174K _international_rectifier

IRFP460PBF
IRFP460PBF

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27? G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast sw

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