IRFP4710PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: IRFP4710PBF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 190 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 72 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 130 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm
   Paquete / Cubierta: TO247AC

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IRFP4710PBF Datasheet (PDF)

..1. Size:178K international rectifier
irfp4710pbf.pdf

PD - 95055IRFP4710PbFHEXFET Power MOSFETAppIicationsVDSS RDS(on) max IDl High frequency DC-DC converters100V 0.014 72Al Motor Controll Uninterruptible Power Suppliesl Lead-FreeBenefitsl Low Gate-to-Drain Charge to ReduceSwitching Lossesl Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247ACl Fully Charact

..2. Size:178K infineon
irfp4710pbf.pdf

6.1. Size:103K international rectifier
irfp4710.pdf

PD - 94361IRFP4710HEXFET Power MOSFETApplicationsVDSS RDS(on) max ID High frequency DC-DC converters100V 0.014 72A Motor Control Uninterruptible Power SuppliesBenefits Low Gate-to-Drain Charge to ReduceSwitching Losses Fully Characterized Capacitance IncludingEffective COSS to Simplify Design, (SeeApp. Note AN1001)TO-247AC Fully Characterized Avalanche Volta

6.2. Size:243K inchange semiconductor
irfp4710.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRFP4710IIRFP4710FEATURESStatic drain-source on-resistance:RDS(on)14mEnhancement mode:Vth =3.5 to 5.5 V (VDS=VGS, ID=250A)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Frequency DC-DC ConvertersUninterruptible Power Suppl

8.1. Size:329K international rectifier
irfp4768pbf.pdf

PD - 97379IRFP4768PbFHEXFET Power MOSFETDApplicationsVDSS250Vl High Efficiency Synchronous Rectification in SMPSRDS(on) typ.l Uninterruptible Power Supply 14.5ml High Speed Power SwitchingGmax. 17.5ml Hard Switched and High Frequency CircuitsID 93ASBenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance

8.2. Size:329K infineon
irfp4768pbf.pdf

8.3. Size:47K ixys
irfp470.pdf

IRFP 470 VDSS = 500 VMegaMOSTMFETID (cont) = 24 ARDS(on) = 0.23 N-Channel Enhancement ModeSymbol Test Conditions Maximum Ratings TO-247 ADVDSS TJ = 25C to 150C 500 VVDGR TJ = 25C to 150C; RGS = 1 M 500 VVGS Continuous 20 V D (TAB)VGSM Transient 30 VID25 TC = 25C24 AG = Gate, D = Drain,IDM TC = 25C, pulse width limited by TJM 96 A

8.4. Size:334K inchange semiconductor
irfp470.pdf

isc N-Channel MOSFET Transistor IRFP470FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sou

8.5. Size:243K inchange semiconductor
irfp4768.pdf

isc N-Channel MOSFET Transistor IRFP4768IIRFP4768FEATURESStatic drain-source on-resistance:RDS(on)17.5mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh Efficiency Synchronous Rectification in SMPSUninterruptible Power SupplyHigh Speed Power SwitchingHard Swit

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