IRFP4868PBF Todos los transistores

 

IRFP4868PBF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRFP4868PBF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 517 W

Tensión drenaje-fuente (Vds): 300 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 70 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Tiempo de elevación (tr): 16 nS

Conductancia de drenaje-sustrato (Cd): 612 pF

Resistencia drenaje-fuente RDS(on): 0.032 Ohm

Empaquetado / Estuche: TO247AC

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IRFP4868PBF Datasheet (PDF)

1.1. irfp4868pbf.pdf Size:303K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP4868PbF VDSS 300V D RDS(on) typ. 25.5m max. 32m S ID 70A D G Applications TO-247AC  High Efficiency Synchronous Rectification in SMPS  Uninterruptible Power Supply  High Speed Power Switching G D S  Hard Switched and High Frequency Circuits Gate Drain Source Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fu

5.1. irfp4137pbf.pdf Size:380K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP4137PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 300V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 56m  Hard Switched and High Frequency Circuits G 69m max S ID 38A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

5.2. irfp462.pdf Size:44K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP460, S E M I C O N D U C T O R IRFP462 20A and 17A, 500V, 0.27 and 0.35 Ohm, January 1998 N-Channel Power MOSFETs Features Description • 20A and 17A, 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power • rDS(ON) = 0.27Ω and 0.35Ω MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in t

 5.3. irfp4468pbf.pdf Size:296K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD -97134 IRFP4468PbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 2.0m : l Uninterruptible Power Supply l High Speed Power Switching max. 2.6m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 290A c ID (Package Limited) 195A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ru

5.4. irfp4127pbf.pdf Size:511K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP4127PbF HEXFET® Power MOSFET Application  High Efficiency Synchronous Rectification in SMPS D VDSS 200V  Uninterruptible Power Supply High Speed Power Switching RDS(on) typ. 17m  Hard Switched and High Frequency Circuits G 21m max S ID 75A Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Chara

 5.5. irfp4229pbf.pdf Size:301K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97079B IRFP4229PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power RDS(ON) typ. @ 10V m 38 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 87 A and Pass Switch Applications

5.6. irfp4768pbf.pdf Size:329K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97379 IRFP4768PbF HEXFET® Power MOSFET D Applications VDSS 250V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 14.5m Ω l High Speed Power Switching G max. 17.5m Ω l Hard Switched and High Frequency Circuits ID 93A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance

5.7. irfp4232pbf.pdf Size:290K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 96965A IRFP4232PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 250 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 300 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 30 dissipation in Sustain & ER applications EPULSE typ. 310 µJ l Low QG for fast response IRP max @ TC= 100°C l

5.8. irfp4568pbf.pdf Size:319K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD -96175 IRFP4568PbF HEXFET® Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS D VDSS 150V l Uninterruptible Power Supply RDS(on) typ. 4.8m l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 5.9m S ID (Silicon Limited) 171 Benefits l Improved Gate, Avalanche and Dynamic dV/dt D Ruggedness l Fully Characterized Capacit

5.9. irfp4227pbf.pdf Size:296K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97070A IRFP4227PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS max 200 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 240 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 21 Dissipation in PDP Sustain, Energy Recovery IRP max @ TC= 100°C 130 A and Pass Switch Applications

5.10. irfp448pbf.pdf Size:1663K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.60 RoHS* • Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 • Fast Switching Qgs (nC) 8.4 • Ease of Paralleling Qgd (nC) 50 • Simple Drive Requirements Configuration Single • Lead

5.11. irfp450pbf.pdf Size:878K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 94852 IRFP450PbF • Lead-Free www.irf.com 1 11/17/03 IRFP450PbF 2 www.irf.com IRFP450PbF www.irf.com 3 IRFP450PbF 4 www.irf.com IRFP450PbF www.irf.com 5 IRFP450PbF 6 www.irf.com IRFP450PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) - D - 3.65 (.143) 5.30 (.209) 15.90 (.626) 3.55 (.140) 4.70 (.185) 15.30 (.602) 0.25 (.010) M D B M 2

5.12. irfp460n irfp460npbf.pdf Size:158K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.24 • Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 • Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configura

5.13. irfp450b.pdf Size:729K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

November 2001 IRFP450B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 87 nC) planar, DMOS technology. • Low Crss ( typical 60 pF) This advanced technology has been especially tailored to • Fast s

5.14. irfp450r irfp451r irfp452r irfp453r.pdf Size:204K _upd-mosfet

IRFP4868PBF
IRFP4868PBF



5.15. irfp460b.pdf Size:183K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP460B, SiHG460B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.25 - Low Input Capacitance (Ciss) Qg max. (nC) 170 - Reduced Capacitive Switching Losses Qgs (nC) 14 - High Body Diode Ruggedness Qgd (nC) 28 - Avalanche Energy Rate

5.16. irfp4242pbf.pdf Size:290K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 96966B IRFP4242PbF PDP MOSFET Features Key Parameters l Advanced process technology VDS min 300 V l Key parameters optimized for PDP Sustain & Energy Recovery applications VDS (Avalanche) typ. 360 V l Low EPULSE rating to reduce the power m RDS(ON) typ. @ 10V 49 dissipation in Sustain & ER applications IRP max @ TC= 100°C 93 A l Low QG for fast response TJ max l High re

5.17. irfp4332pbf.pdf Size:298K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97100B IRFP4332PbF PDP SWITCH Features Key Parameters l Advanced Process Technology VDS min 250 V l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch Applications VDS (Avalanche) typ. 300 V l Low EPULSE Rating to Reduce Power m RDS(ON) typ. @ 10V 29 Dissipation in PDP Sustain, Energy Recovery TJ max 175 °C and Pass Switch Applications l Low QG for

5.18. irfp4410zpbf.pdf Size:283K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97309A IRFP4410ZPbF HEXFET® Power MOSFET Applications VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. l Uninterruptible Power Supply 7.2m: l High Speed Power Switching max. 9.0m : l Hard Switched and High Frequency Circuits ID (Silicon Limited) 97A Benefits l Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness l Fully Characterized Cap

5.19. irfp450n irfp450npbf.pdf Size:129K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP450N, SiHFP450N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement RoHS RDS(on) (Max.) (Ω)VGS = 10 V 0.37 • Improved Gate, Avalanche and Dynamic dV/dt COMPLIANT Ruggedness Qg (Max.) (nC) 77 • Fully Characterized Capacitance and Qgs (nC) 26 Avalanche Voltage and Current Qgd (nC) 34 • Effect

5.20. irfp4228pbf.pdf Size:300K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97229A IRFP4228PbF PDP SWITCH Features l Advanced Process Technology Key Parameters l Key Parameters Optimized for PDP VDS min 150 V Sustain, Energy Recovery and Pass VDS (Avalanche) typ. 180 V Switch Applications RDS(ON) typ. @ 10V m 12 l Low EPULSE Rating to Reduce Power IRP max @ TC= 100°C 170 A Dissipation in PDP Sustain, Energy TJ max 175 °C Recovery and Pass

5.21. irfp449.pdf Size:119K _upd-mosfet

IRFP4868PBF



5.22. irfp440pbf.pdf Size:1449K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 • Repetitive Avalanche Rated Available RDS(on) (Ω)VGS = 10 V 0.85 • Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 63 COMPLIANT • Fast Switching Qgs (nC) 11 • Ease of Paralleling Qgd (nC) 30 • Simple Drive Requirements Configuration Single • Lead (Pb

5.23. irfp460pbf.pdf Size:156K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Dynamic dV/dt Rating VDS (V) 500 Available • Repetitive Avalanche Rated RDS(on) (Ω)VGS = 10 V 0.27 RoHS* • Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT • Fast Switching Qgs (nC) 29 Qgd (nC) 110 • Ease of Paralleling Configuration Single • Simple Drive Requirements D • Le

5.24. irfp4110pbf.pdf Size:288K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97311 IRFP4110PbF Applications HEXFET® Power MOSFET l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply VDSS 100V l High Speed Power Switching RDS(on) typ. 3.7m: l Hard Switched and High Frequency Circuits max. 4.5m: ID (Silicon Limited) 180A c ID (Package Limited) 120A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness D l

5.25. irfp450apbf.pdf Size:195K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD -95054 SMPS MOSFET IRFP450APbF HEXFET® Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40Ω 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avala

5.26. irfp4321pbf.pdf Size:291K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97106 IRFP4321PbF HEXFET® Power MOSFET Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS VDSS 150V l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits 12m: RDS(on) typ. Benefits max. 15.5m: l Low RDSON Reduces Losses ID 78A l Low Gate Charge Improves the Switching Performance D l Improved Diode Recovery

5.27. irfp4004pbf.pdf Size:295K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97323 IRFP4004PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 40V l High Speed Power Switching RDS(on) typ. 1.35mΩ l Hard Switched and High Frequency Circuits max. 1.70mΩ G ID (Silicon Limited) 350A c S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rug

5.28. irfp440r irfp441r irfp442r irfp443r.pdf Size:698K _upd-mosfet

IRFP4868PBF
IRFP4868PBF



5.29. irfp4668pbf.pdf Size:287K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD -97140 IRFP4668PbF HEXFET® Power MOSFET Applications D VDSS 200V l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply RDS(on) typ. 8.0m : l High Speed Power Switching l Hard Switched and High Frequency Circuits G max. 9.7m : ID 130A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D l Fully Characterized Capacitance an

5.30. irfp460p.pdf Size:154K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET® Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27Ω G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of f

5.31. irfp4368pbf.pdf Size:277K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97322 IRFP4368PbF Applications l High Efficiency Synchronous Rectification in HEXFET® Power MOSFET SMPS l Uninterruptible Power Supply D VDSS 75V l High Speed Power Switching RDS(on) typ. 1.46mΩ l Hard Switched and High Frequency Circuits max. 1.85mΩ G ID (Silicon Limited) 350Ac S ID (Package Limited) 195A Benefits l Improved Gate, Avalanche and Dynamic dv/dt Rugge

5.32. irfp4310zpbf.pdf Size:299K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 97123A IRFP4310ZPbF HEXFET® Power MOSFET Applications D VDSS 100V l High Efficiency Synchronous Rectification in SMPS RDS(on) typ. 4.8m : l Uninterruptible Power Supply l High Speed Power Switching max. 6.0m : l Hard Switched and High Frequency Circuits G ID (Silicon Limited) 134A c ID (Package Limited) 120A S Benefits l Improved Gate, Avalanche and Dynamic dV/dt

5.33. irfp4710pbf.pdf Size:178K _upd-mosfet

IRFP4868PBF
IRFP4868PBF

PD - 95055 IRFP4710PbF HEXFET® Power MOSFET AppIications VDSS RDS(on) max ID l High frequency DC-DC converters 100V 0.014Ω 72A l Motor Control l Uninterruptible Power Supplies l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC l Fully Charact

5.34. irfp450.pdf Size:276K _st

IRFP4868PBF
IRFP4868PBF

IRFP450 N-CHANNEL 500V - 0.31? - 14A TO-247 PowerMeshII MOSFET TYPE VDSS RDS(on) ID IRFP450 500V < 0.38? 14 A TYPICAL RDS(on) = 0.31? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK 3 GATE CHARGE MINIMIZED 2 1 TO-247 DESCRIPTION The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re- finements introduced grea

5.35. irfp460.pdf Size:91K _st

IRFP4868PBF
IRFP4868PBF

IRFP460 ? N - CHANNEL 500V - 0.22 ? - 20 A - TO-247 PowerMESH? MOSFET TYPE VDSS RDS(on) ID IRFP460 500 V < 0.27 ? 20 A TYPICAL R = 0.22 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION 3 2 This power MOSFET is designed using the 1 companys consolidated strip layout-based MESH TO-247 OVERLAY proc

5.36. irfp450-1-2-3-fi.pdf Size:489K _st2

IRFP4868PBF
IRFP4868PBF

5.37. irfp460c.pdf Size:770K _fairchild_semi

IRFP4868PBF
IRFP4868PBF

February 2002 IRFP460C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 20A, 500V, RDS(on) = 0.24? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 130nC) planar stripe, DMOS technology. Low Crss ( typical 60 pF) This advanced technology has been especially tailored to Fast switching

5.38. irfp450lc.pdf Size:159K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 9.1231 IRFP450LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V Vgs Rating Reduced Ciss, Coss, Crss RDS(on) = 0.40? Isolated Central Mounting Hole Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 14A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.39. irfp460n.pdf Size:94K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD-94098 SMPS MOSFET IRFP460N HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current TO-24

5.40. irfp450.pdf Size:876K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 94852 IRFP450PbF Lead-Free 11/17/03 Document Number: 91233 www.vishay.com 1 IRFP450PbF Document Number: 91233 www.vishay.com 2 IRFP450PbF Document Number: 91233 www.vishay.com 3 IRFP450PbF Document Number: 91233 www.vishay.com 4 IRFP450PbF Document Number: 91233 www.vishay.com 5 IRFP450PbF Document Number: 91233 www.vishay.com 6 IRFP450PbF TO-247AC Package Outlin

5.41. irfp440.pdf Size:925K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 95198 IRFP440PbF Lead-Free 4/27/04 Document Number: 91228 www.vishay.com 1 IRFP440PbF Document Number: 91228 www.vishay.com 2 IRFP440PbF Document Number: 91228 www.vishay.com 3 IRFP440PbF Document Number: 91228 www.vishay.com 4 IRFP440PbF Document Number: 91228 www.vishay.com 5 IRFP440PbF Document Number: 91228 www.vishay.com 6 IRFP440PbF TO-247AC Package Outline

5.42. irfp460.pdf Size:873K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 94901 IRFP460PbF Lead-Free 12/19/03 Document Number: 91237 www.vishay.com 1 IRFP460PbF Document Number: 91237 www.vishay.com 2 IRFP460PbF Document Number: 91237 www.vishay.com 3 IRFP460PbF Document Number: 91237 www.vishay.com 4 IRFP460PbF Document Number: 91237 www.vishay.com 5 IRFP460PbF Document Number: 91237 www.vishay.com 6 IRFP460PbF TO-247AC Package Outlin

5.43. irfp460apbf.pdf Size:206K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD- 94853 SMPS MOSFET IRFP460APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.27? 20A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Vol

5.44. irfp450n.pdf Size:121K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD- 94216 SMPS MOSFET IRFP450N HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current

5.45. irfp460lcpbf.pdf Size:205K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 94902 IRFP460LCPbF Lead-Free 12/19/03 Document Number: 91235 www.vishay.com 1 IRFP460LCPbF Document Number: 91235 www.vishay.com 2 IRFP460LCPbF Document Number: 91235 www.vishay.com 3 IRFP460LCPbF Document Number: 91235 www.vishay.com 4 IRFP460LCPbF Document Number: 91235 www.vishay.com 5 IRFP460LCPbF Document Number: 91235 www.vishay.com 6 IRFP460LCPbF Document

5.46. irfp450npbf.pdf Size:199K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD- 95663 SMPS MOSFET IRFP450NPbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply 500V 0.37? 14A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Volta

5.47. irfp460lc.pdf Size:154K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 9.1232 IRFP460LC HEXFET Power MOSFET Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V Vgs Rating VDSS = 500V Reduced Ciss, Coss, Crss Isolated Central Mounting Hole RDS(on) = 0.27? Dynamic dv/dt Rated Repetitive Avalanche Rated ID = 20A Description This new series of Low Charge HEXFET Power MOSFETs achieve significantly lower gate charge over conventional MOSFE

5.48. irfp460as.pdf Size:115K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD-94011A SMPS MOSFET IRFP460AS HEXFET Power MOSFET Applications SMPS, UPS, Welding and High Speed VDSS Rds(on) max ID Power Switching 500V 0.27? 20A Benefits Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements Solder plated and leadformed for surface mounting Description Third Genera

5.49. irfp4710.pdf Size:103K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 94361 IRFP4710 HEXFET Power MOSFET Applications VDSS RDS(on) max ID High frequency DC-DC converters 100V 0.014? 72A Motor Control Uninterruptible Power Supplies Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-247AC Fully Characterized Avalanche Voltage an

5.50. irfp450apbf.pdf Size:224K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD -95054 SMPS MOSFET IRFP450APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.40? 14A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche V

5.51. irfp448.pdf Size:864K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD - 94899 IRFP448PbF Lead-Free 12/18/03 Document Number: 91229 www.vishay.com 1 IRFP448PbF Document Number: 91229 www.vishay.com 2 IRFP448PbF Document Number: 91229 www.vishay.com 3 IRFP448PbF Document Number: 91229 www.vishay.com 4 IRFP448PbF Document Number: 91229 www.vishay.com 5 IRFP448PbF Document Number: 91229 www.vishay.com 6 IRFP448PbF TO-247AC Package Outlin

5.52. irfp450a.pdf Size:101K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD -91884 SMPS MOSFET IRFP450A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.40? 14A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

5.53. irfp460a.pdf Size:95K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD- 91880 SMPS MOSFET IRFP460A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 500V 0.27? 20A High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current G D

5.54. irfp460p.pdf Size:174K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD-93946A IRFP460P Dynamic dv/dt Rating HEXFET Power MOSFET Repetitive Avalanche Rated D Isolated Central Mounting Hole VDSS = 500V Fast Switching Ease of Paralleling Simple Drive Requirements RDS(on) = 0.27? G Solder Plated for Reflowing ID = 20A Description S Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast sw

5.55. irfp460npbf.pdf Size:161K _international_rectifier

IRFP4868PBF
IRFP4868PBF

PD-94809 SMPS MOSFET IRFP460NPbF HEXFET Power MOSFET Applications Switch Mode Power Supply ( SMPS ) VDSS Rds(on) max ID Uninterruptable Power Supply 500V 0.24? 20A High speed power switching Switch Mode Power Supply ( SMPS ) Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and dynamic dv/dt Ruggedness Fully Characterized C

5.56. irfp440-443 irf840-843.pdf Size:192K _samsung

IRFP4868PBF
IRFP4868PBF



5.57. irfp430-433 irf830-833.pdf Size:345K _samsung

IRFP4868PBF
IRFP4868PBF



5.58. irfp440a.pdf Size:932K _samsung

IRFP4868PBF
IRFP4868PBF

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.638 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Uni

5.59. irfp450a.pdf Size:942K _samsung

IRFP4868PBF
IRFP4868PBF

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = 500V Lower RDS(ON) : 0.308 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.60. irfp448 sihfp448.pdf Size:1629K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.60 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 84 Fast Switching Qgs (nC) 8.4 Ease of Paralleling Qgd (nC) 50 Simple Drive Requirements Configuration Single Compliant to RoHS Direct

5.61. irfp450a sihfp450a.pdf Size:302K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP450A, SiHFP450A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) (?)VGS = 10 V 0.40 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 64 Ruggedness COMPLIANT Qgs (nC) 16 Fully Characterized Capacitance and Qgd (nC) 26 Avalanche Voltage and Current Configuration Sin

5.62. irfp460a sihfp460a.pdf Size:180K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP460A, SiHFP460A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.27 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 105 COMPLIANT Ruggedness Qgs (nC) 26 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 42 and Current Configuration Single

5.63. irfp440 sihfp440.pdf Size:1460K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP440, SiHFP440 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.85 RoHS* Isolated Central Mounting Hole COMPLIANT Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 11 Ease of Paralleling Qgd (nC) 30 Simple Drive Requirements Configuration Single Compliant to RoHS Directiv

5.64. irfp450 sihfp450.pdf Size:1560K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP450, SiHFP450 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Repetitive Avalanche Rated Available RDS(on) (?)VGS = 10 V 0.40 Isolated Central Mounting Hole RoHS* Qg (Max.) (nC) 150 COMPLIANT Fast Switching Qgs (nC) 20 Ease of Paralleling Qgd (nC) 80 Simple Drive Requirements Configuration Single Lead (Pb)-free Available

5.65. irfp460n sihfp460n.pdf Size:158K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP460N, SiHFP460N Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (?)VGS = 10 V 0.24 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 124 COMPLIANT Ruggedness Qgs (nC) 40 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 57 Configuration Singl

5.66. irfp460 sihfp460.pdf Size:156K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP460, SiHFP460 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) (?)VGS = 10 V 0.27 RoHS* Isolated Central Mounting Hole Qg (Max.) (nC) 210 COMPLIANT Fast Switching Qgs (nC) 29 Qgd (nC) 110 Ease of Paralleling Configuration Single Simple Drive Requirements D Lead (Pb)-free Avail

5.67. irfp450lc sihfp450lc.pdf Size:1566K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP450LC, SiHFP450LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.40 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 74 Reduced Ciss, Coss, Crss COMPLIANT Qgs (nC) 19 Isolated Central Mounting Hole Qgd (nC) 35 Dynamic dV/dt Rated Configuration Single Repeti

5.68. irfp460lc sihfp460lc.pdf Size:1124K _vishay

IRFP4868PBF
IRFP4868PBF

IRFP460LC, SiHFP460LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) (?)VGS = 10 V 0.27 Enhanced 30 V VGS Rating RoHS* Qg (Max.) (nC) 120 COMPLIANT Reduced Ciss, Coss, Crss Qgs (nC) 32 Isolated Central Mounting Hole Qgd (nC) 49 Dynamic dV/dt Rating Configuration Single Repe

5.69. irfp450.pdf Size:46K _ixys

IRFP4868PBF
IRFP4868PBF

IRFP 450 VDSS = 500 V Standard Power MOSFET ID(cont) = 14 A ? RDS(on) = 0.40 ? ? ? ? N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C14 A G = Gate, D = Drain, IDM TC = 25C, pulse width limited by TJM 56 A S = Source, T

5.70. irfp460.pdf Size:77K _ixys

IRFP4868PBF
IRFP4868PBF

MegaMOSTM IRFP 460 VDSS = 500 V Power MOSFET ID(cont) = 20 A ? RDS(on) = 0.27? ? ? ? N-Channel Enhancement Mode, HDMOSTM Family Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25C to 150C 500 V VDGR TJ = 25C to 150C; RGS = 1 M? 500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25C20 A G = Gate, D = Drain, IDM TC = 25C, pulse width limited by TJM 80 A

5.71. irfp470.pdf Size:47K _ixys

IRFP4868PBF
IRFP4868PBF

IRFP 470 VDSS = 500 V MegaMOSTMFET ID (cont) = 24 A Ω RDS(on) = 0.23 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V D (TAB) VGSM Transient ±30 V ID25 TC = 25°C24 A G = Gate, D = Drain, IDM TC = 25°C, pulse width limited by TJM 96 A

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: SW1N55D | SKI10297 | SKI10195 | SKI10123 | SKI07171 | SKI07114 | SKI07074 | SKI06106 | SKI06073 | SKI06048 | SKI04044 | SKI04033 | SKI04024 | SKI03087 | SKI03063 |

 

 

 
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