FCA20N60SF109 Todos los transistores

 

FCA20N60SF109 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCA20N60SF109
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 260 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 960 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.26 Ohm
   Paquete / Cubierta: TO-3PN
 

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FCA20N60SF109 Datasheet (PDF)

 5.1. Size:750K  fairchild semi
 fca20n60s fca20n60s f109.pdf pdf_icon

FCA20N60SF109

August 2007TMSuperFETFCA20N60S / FCA20N60S_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Farichilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.22balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

 6.1. Size:971K  fairchild semi
 fch20n60 fca20n60 fca20n60 f109.pdf pdf_icon

FCA20N60SF109

December 2008TMSuperFETFCH20N60 / FCA20N60 / FCA20N60_F109600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate cha

 6.2. Size:952K  fairchild semi
 fca20n60f fca20n60fs.pdf pdf_icon

FCA20N60SF109

December 2008 TMSuperFETFCA20N60F 600V N-CHANNEL FRFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

 6.3. Size:481K  fairchild semi
 fca20n60 fca20n60 f109.pdf pdf_icon

FCA20N60SF109

August 2014FCA20N60N-Channel SuperFET MOSFET600 V, 20 A, 190 mFeatures DescriptionSuperFET MOSFET is Fairchild Semiconductors first genera- 650V @ TJ = 150Ction of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 150 m utilizing charge balance technology for outstanding low on- Ultra Low Gate Charge (Typ. Qg = 75 nC )resistance an

MOSTRAR MÁS

Otros transistores... IRFP7430PBF , IRFP7530PBF , IRFP7537PBF , IRFP7718PBF , FCA16N60 , FCA16N60F109 , FCA20N60FS , FCA20N60S , 50N06 , FCAB2126 , FCB110N65F , FCB11N60FTM , FCB11N60TM , FCB20N60FTM , FCB20N60TM , FCB290N80 , FCB36N60NTM .

History: HUF76645P3

 

 
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