FDB20AN06A0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

June 2003FDB20AN06A0 / FDP20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

June 2003FDB20AN06A0 / FDP20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

December 2013FDB20N50F N-Channel UniFETTM FRFET MOSFET500 V, 20 A, 260 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 27

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

isc N-Channel Mosfet Transistor FDB20N50FFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.26(Max)DS(on)Low leakage current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A