FDB20AN06A0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDB20AN06A0
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 45 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 98 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO-263AB

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FDB20AN06A0 Datasheet (PDF)

..1. Size:613K fairchild semi
fdb20an06a0 fdp20an06a0.pdf

June 2003FDB20AN06A0 / FDP20AN06A0N-Channel PowerTrench MOSFET60V, 45A, 20mFeatures Applications rDS(ON) = 17m (Typ.), VGS = 10V, ID = 45A Motor / Body Load Control Qg(tot) = 15nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse)

..2. Size:617K fairchild semi
fdb20an06a0 fdp20an06a0.pdf

9.1. Size:562K fairchild semi
fdb20n50f.pdf

December 2013FDB20N50F N-Channel UniFETTM FRFET MOSFET500 V, 20 A, 260 mFeatures Description RDS(on) = 220 m (Typ.) @ VGS = 10 V, ID = 10 A UniFETTM MOSFET is Fairchild Semiconductors high voltageMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 50 nC)This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 27

9.2. Size:675K onsemi
fdb20n50f.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.3. Size:250K inchange semiconductor
fdb20n50f.pdf

isc N-Channel Mosfet Transistor FDB20N50FFEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSLow ON Resistance R = 0.26(Max)DS(on)Low leakage current100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDesigned for high efficiency switch mode power supply.A

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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