FDB8874 Todos los transistores

 ..1. Size:473K  fairchild semi
 fdb8874.pdf

2 May 2008 tmM FDB8874 N-Channel PowerTrench MOSFET 30V, 121A, 4.7m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 4.7m , VGS = 10V, ID = 40A improve the overall efficiency of DC/DC converters using rDS(ON) = 6.0m , VGS = 4.5V, ID = 40A either synchronous or conventional switching PWM controllers. It has been optimized

 ..2. Size:287K  inchange semiconductor
 fdb8874.pdf

isc N-Channel MOSFET Transistor FDB8874 FEATURES Drain Current I =121A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =4.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:304K  fairchild semi
 fdb8876.pdf

November 2005 FDB8876 N-Channel PowerTrench MOSFET 30V, 71A, 8.5m General Descriptions Features rDS(ON) = 8.5m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 10.3m , VGS = 4.5V, ID = 40A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or conventiona

 8.2. Size:277K  fairchild semi
 fdb8878.pdf

November 2005 FDB8878 N-Channel Logic Level PowerTrench MOSFET 30V, 48A, 14m General Descriptions Features rDS(ON) = 14m , VGS = 10V, ID = 40A This N-Channel MOSFET has been designed specifically to rDS(ON) = 18m , VGS = 4.5V, ID = 36A improve the overall efficiency of DC/DC converters using High performance trench technology for extremely low either synchronous or con

 8.3. Size:211K  fairchild semi
 fdb8870 f085.pdf

July 2010 FDB8870_F085 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A controllers. It has been optimized for

 8.4. Size:765K  fairchild semi
 fdb8870.pdf

May 2008 tm FDB8870 N-Channel PowerTrench MOSFET 30V, 160A, 3.9m General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 3.9m , VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 4.4m , VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for

 8.5. Size:287K  inchange semiconductor
 fdb8876.pdf

isc N-Channel MOSFET Transistor FDB8876 FEATURES Drain Current I =121A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =4.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.6. Size:287K  inchange semiconductor
 fdb8878.pdf

isc N-Channel MOSFET Transistor FDB8878 FEATURES Drain Current I =48A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =14m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.7. Size:285K  inchange semiconductor
 fdb8870.pdf

isc N-Channel MOSFET Transistor FDB8870 FEATURES Drain Current I =160A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =3.9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid