FDBL86366F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDBL86366F085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 220 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 1030 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
   Paquete / Cubierta: MO-299A

Búsqueda de reemplazo de MOSFET FDBL86366F085

FDBL86366F085 Datasheet (PDF)

5.1. Size:394K fairchild semi
fdbl86366 f085.pdf

April 2015FDBL86366_F085N-Channel PowerTrench MOSFET80 V, 220 A, 3.0 m Features Typical RDS(on) = 2.4 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain ManagementS Solenoid and Motor Drivers Integrated Starter/Alternator For

5.2. Size:486K onsemi
fdbl86366-f085.pdf

MOSFET POWERTRENCH)N-Channel80 V, 220 A, 3.0 mWFDBL86366-F085Featureswww.onsemi.com Typical RDS(on) = 2.4 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 86 nC at VGS = 10 V, ID = 80 AD UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantApplicationsG Automotive Engine Control PowerTrain Manageme

6.1. Size:393K fairchild semi
fdbl86363 f085.pdf

April 2015FDBL86363_F085N-Channel PowerTrench MOSFET80 V, 240 A, 2.0 m Features Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain ManagementS Solenoid and Motor Drivers Integrated Starter/Alternator Fo

6.2. Size:479K fairchild semi
fdbl86361 f085.pdf

December 2014FDBL86361_F085N-Channel PowerTrench MOSFET80 V, 300 A, 1.4 m Features Typical RDS(on) = 1.1 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 172 nC at VGS = 10V, ID = 80 A UIS Capability D RoHS Compliant Qualified to AEC Q101Applications G Automotive Engine Control PowerTrain Management Solenoid and Motor DriversS Integrated Starter/Alternato

6.3. Size:366K onsemi
fdbl86363-f085.pdf

FDBL86363-F085N-Channel PowerTrench MOSFET 80 V, 240 A, 2.0 mFeatures Typical RDS(on) = 1.5 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 130 nC at VGS = 10V, ID = 80 AD UIS Capability RoHS Compliant Qualified to AEC Q101ApplicationsG Automotive Engine Control PowerTrain ManagementS Solenoid and Motor Drivers Integrated Starter/Alternator Primary Switc

6.4. Size:460K onsemi
fdbl86361-f085.pdf

MOSFET - POWERTRENCH)N-Channel80 V, 300 A, 1.4 mWFDBL86361-F085Featureswww.onsemi.com Typical RDS(on) = 1.1 mW at VGS = 10 V, ID = 80 A Typical Qg(tot) = 172 nC at VGS = 10 V, ID = 80 AD UIS Capability AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS CompliantApplicationsG Automotive Engine Control PowerTrain Managemen

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