FDC6020C Todos los transistores

 ..1. Size:211K  fairchild semi
 fdc6020c.pdf

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductor s advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS

 ..2. Size:212K  tysemi
 fdc6020c kdc6020c.pdf

SMD Type SMD Type SMD Type SMD Type MOSFET MOSFET Product specification KDC6020C(FDC6020C) ( ) SOT-23-6 Unit mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V) 6 5 4 DS(ON) GS R 39m (V = 2.5V) DS D P-Channel V =-20V I =-4.2A 0to0.1 RDS(ON) 55m (VGS =-4.5V) DS(ON) GS R 82m (V =-2.5V) 1 2

 8.1. Size:62K  fairchild semi
 fdc602p f095.pdf

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of

 8.2. Size:65K  fairchild semi
 fdc602p.pdf

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GS gate version of Fairchild s advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GS process. It has been optimized for power management applications with a wide range of

 8.3. Size:877K  cn vbsemi
 fdc602p.pdf

FDC602P www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available 0.049 at VGS = - 10 V - 4.8 TrenchFET Power MOSFET - 30 5.1 nC 0.054 at VGS = - 4.5 V - 4.1 APPLICATIONS Load Switch TSOP-6 (4) S Top V iew 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Cha