FDC6020C Todos los transistores

 

FDC6020C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDC6020C
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 V
   Qgⓘ - Carga de la puerta: 7 nC
   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 171 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm
   Paquete / Cubierta: SOT23-6
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FDC6020C Datasheet (PDF)

 ..1. Size:211K  fairchild semi
fdc6020c.pdf pdf_icon

FDC6020C

November 2003 FDC6020C Complementary PowerTrench MOSFET General Description Features These N & P-Channel MOSFETs are produced using Q1 4.2 A, 20V. RDS(ON) = 55 m @ VGS = 4.5 V Fairchild Semiconductors advanced PowerTrench RDS(ON) = 82 m @ VGS = 2.5 V process that has been especially tailored to minimize Q2 5.9 A, 20V. RDS(ON) = 27 m @ VGS

 ..2. Size:212K  tysemi
fdc6020c kdc6020c.pdf pdf_icon

FDC6020C

SMD TypeSMD TypeSMD TypeSMD TypeMOSFETMOSFETProduct specification KDC6020C(FDC6020C)( )SOT-23-6Unit: mm Features N-Channel VDS=20V ID=5.9A RDS(ON) 27m (VGS = 4.5V)6 5 4DS(ON) GS R 39m (V = 2.5V)DS D P-ChannelV =-20V I =-4.2A0to0.1 RDS(ON) 55m (VGS =-4.5V)DS(ON) GS R 82m (V =-2.5V)1 2

 8.1. Size:62K  fairchild semi
fdc602p f095.pdf pdf_icon

FDC6020C

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of

 8.2. Size:65K  fairchild semi
fdc602p.pdf pdf_icon

FDC6020C

April 2001 FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged 5.5 A, 20 V R = 35 m @ V = 4.5 V DS(ON) GSgate version of Fairchilds advanced PowerTrench R = 50 m @ V = 2.5 V DS(ON) GSprocess. It has been optimized for power management applications with a wide range of

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