FDC697PF077 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDC697PF077
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6 nS
Cossⓘ - Capacitancia de salida: 544 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Paquete / Cubierta: SSOT-6
Búsqueda de reemplazo de FDC697PF077 MOSFET
FDC697PF077 Datasheet (PDF)
fdc697p fdc697p f077.pdf

January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.
fdc697p.pdf

January 2004 FDC697P P-Channel 1.8V PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses 8 A, 20 V RDS(ON) = 20 m @ VGS = 4.5 V Fairchilds advanced low voltage Power TrenchRDS(ON) = 25 m @ VGS = 2.5 V process. It has been optimized for battery power RDS(ON) = 35 m @ VGS = 1.8 V management applications.
fdc699p fdc699p f077.pdf

January 2004 FDC699P P-Channel 2.5V PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged 7 A, 20 V RDS(ON) = 22 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 30 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power management applications with a wide range of g
Otros transistores... FDC3616N , FDC5612F095 , FDC6020C , FDC602PF095 , FDC633NF095 , FDC640PF095 , FDC645NF095 , FDC697P , IRF520 , FDC699P , FDC699PF077 , FDC796N , FDC796NF077 , FDD044AN03L , FDD068AN03L , FDD107AN06LA0 , FDD10N20LZTM .



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