FDD26AN06A0 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDD26AN06A0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 36 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 72 nS
Cossⓘ - Capacitancia de salida: 155 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Paquete / Cubierta: TO-252AA
- Selección de transistores por parámetros
FDD26AN06A0 Datasheet (PDF)
fdd26an06a0.pdf

August 2004FDD26AN06A0N-Channel PowerTrench MOSFET60V, 36A, 26mFeatures Applications rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A Motor / Body Load Control Qg(tot) = 13nC (Typ.), VGS = 10V ABS Systems Low Miller Charge Powertrain Management Low QRR Body Diode Injection Systems UIS Capability (Single Pulse and Repetitive Pulse) DC-DC conv
fdd26an06a0 f085.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
fdd26an06 f085.pdf

Aug 2011FDD26AN06A0_F085N-Channel PowerTrench MOSFET60V, 36A, 26mApplicationsFeatures Motor / Body Load Control rDS(ON) = 20m (Typ.), VGS = 10V, ID = 36A ABS Systems Qg(tot) = 13nC (Typ.), VGS = 10V Powertrain Management Low Miller Charge Injection Systems Low QRR Body Diode DC-DC converters and Off-line UPS UIS Capability (Si
fdd2612.pdf

August 2001FDD2612200V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 4.9 A, 200 V. RDS(ON) = 720 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional High performance trench technology for extremelyswitching PWM controllers. It has be
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: AM90N15-20P | 2SJ268 | BL3N105-U | TSM4N80CZ | AOC3870A | IRFS640B | JFFM13N65D
History: AM90N15-20P | 2SJ268 | BL3N105-U | TSM4N80CZ | AOC3870A | IRFS640B | JFFM13N65D



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