FDD6782A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDD6782A

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 31 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3 nS

Cossⓘ - Capacitancia de salida: 162 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm

Encapsulados: TO-252

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FDD6782A datasheet

 ..1. Size:324K  fairchild semi
 fdd6782a.pdf pdf_icon

FDD6782A

January 2009 FDD6782A N-Channel PowerTrench MOSFET 25 V, 10.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 10.5 m at VGS = 10 V, ID = 14.9 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 24.0 m at VGS = 4.5 V, ID = 11.0 A synchronous or conventional switching PWM controllers. It has

 ..2. Size:288K  inchange semiconductor
 fdd6782a.pdf pdf_icon

FDD6782A

isc N-Channel MOSFET Transistor FDD6782A FEATURES Drain Current I =20A@ T =25 D C Drain Source Voltage V =25V(Min) DSS Static Drain-Source On-Resistance R =10.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:331K  fairchild semi
 fdd6780a fdu6780a f071.pdf pdf_icon

FDD6782A

January 2009 FDD6780A / FDU6780A_F071 N-Channel PowerTrench MOSFET 25 V, 8.6 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.6 m at VGS = 10 V, ID = 16.4 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 19.0 m at VGS = 4.5 V, ID = 12.2 A synchronous or conventional switching PWM contro

 8.2. Size:297K  fairchild semi
 fdd6780.pdf pdf_icon

FDD6782A

June 2009 FDD6780 N-Channel PowerTrench MOSFET 25 V, 30 A, 8.5 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.5 m at VGS = 10 V, ID = 16.5 A improve the overall efficiency of DC/DC converters using either Max rDS(on) = 12.5 m at VGS = 4.5 V, ID = 13.0 A synchronous or conventional switching PWM controllers. It has

MOSTRAR MÁS

Otros transistores... FDD6670AS, FDD6672A, FDD6676AS, FDD6682, FDD6688S, FDD6696, FDD6776A, FDD6780, P55NF06, FDD6796, FDD6N20TF, FDD6N50TF, FDD6N50TM, FDD7030BL, FDD7N25LZTM, FDD7N60NZTM, FDD8580