FDI047AN08A0 Todos los transistores

 ..1. Size:602K  fairchild semi
 fdi047an08a0.pdf

June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7m Features Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys

 ..2. Size:606K  fairchild semi
 fdp047an08a0 fdi047an08a0 fdh047an08a0.pdf

June 2004 FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7m Features Applications rDS(ON) = 4.0m (Typ.), VGS = 10V, ID = 80A 42V Automotive Load Control Qg(tot) = 92nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low QRR Body Diode Electronic Valve Train Sys

 ..3. Size:255K  inchange semiconductor
 fdi047an08a0.pdf

isc N-Channel MOSFET Transistor FDI047AN08A0 FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage- V =75V(Min) DSS Static Drain-Source On-Resistance R = 4.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pu

 9.1. Size:595K  fairchild semi
 fdi040n06.pdf

November 2009 FDI040N06 N-Channel PowerTrench MOSFET 60V, 168A, 4.0m Features General Description RDS(on) = 3.2m ( Typ.) @ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superior switching p

 9.2. Size:750K  fairchild semi
 fdp045n10a f102 fdi045n10a f102.pdf

July 2011 FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5m Features Description RDS(on) = 3.8m ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has been Fast Switching Speed especially tailored to minimize the on-state resistance and yet maintain superio

 9.3. Size:710K  fairchild semi
 fdp045n10a fdi045n10a.pdf

November 2013 FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 m Features Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching

 9.4. Size:710K  fairchild semi
 fdi045n10a fdp045n10a.pdf

November 2013 FDP045N10A / FDI045N10A N-Channel PowerTrench MOSFET 100 V, 164 A, 4.5 m Features Description RDS(on) = 3.8 m ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advance PowerTrench process that has Fast Switching Speed been tailored to minimize the on-state resistance while main- taining superior switching

 9.5. Size:647K  onsemi
 fdp045n10a fdi045n10a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.6. Size:255K  inchange semiconductor
 fdi040n06.pdf

isc N-Channel MOSFET Transistor FDI040N06 FEATURES Drain Current I = 168A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos