FDMD8900 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMD8900
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 66 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 2.3 nS
Cossⓘ - Capacitancia de salida: 462 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Paquete / Cubierta: POWER3.3X5
Búsqueda de reemplazo de FDMD8900 MOSFET
FDMD8900 Datasheet (PDF)
fdmd8900.pdf

June 2015FDMD8900N-Channel PowerTrench MOSFETQ1: 30 V, 66 A, 4 m Q2: 30 V, 42 A, 5.5 mFeatures General DescriptionQ1: N-ChannelThis devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS Max rDS(on) = 4 m at VGS = 10 V, ID = 19 Adrain are internally connected providing a low source inductance Max rDS(on) =
fdmd85100.pdf

March 2015FDMD85100Dual N-Channel PowerTrench MOSFETQ1: 100 V, 48A, 9.9 m Q2: 100 V, 48A, 9.9 mFeatures General DescriptionQ1: N-ChannelThis device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 m at VGS = 10 V, ID = 10.4 Ainternally connected for half/full bridge, low source inductance Max rDS(on
fdmd82100.pdf

June 2014FDMD82100Dual N-Channel Power Trench MOSFET 100 V, 25 A, 19 mFeatures General Description Max rDS(on) = 19 m at VGS = 10 V, ID = 7 AThis device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 m at VGS = 6 V, ID = 5.5 Ainternally connected for half/full bridge, low source inductance Ideal
fdmd84100.pdf

January 2014FDMD84100Dual N-Channel PowerTrench MOSFET 100 V, 21 A, 20 mFeatures General Description Max rDS(on) = 20 m at VGS = 10 V, ID = 7 A This package integrates two N-Channel devices connected internally in common-source configuration. This enables very Max rDS(on) = 32 m at VGS = 6 V, ID = 5.5 Alow package parasitics and optimized thermal path to the Ideal fo
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History: DMN4035L | QM3004N3 | S70N08ZS | AM4396N | AP70SL950AI | AM4302N | P0908AK
History: DMN4035L | QM3004N3 | S70N08ZS | AM4396N | AP70SL950AI | AM4302N | P0908AK



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