FDMD8900 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDMD8900
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 27 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 12 V
Corriente continua de drenaje (Id): 66 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 2.5 V
Tiempo de elevación (tr): 2.3 nS
Conductancia de drenaje-sustrato (Cd): 462 pF
Resistencia drenaje-fuente RDS(on): 0.004 Ohm
Empaquetado / Estuche: Power3.3X5
Búsqueda de reemplazo de MOSFET FDMD8900
FDMD8900 Datasheet (PDF)
1.1. fdmd8900.pdf 
Size:500K _upd-mosfet
June 2015 FDMD8900 N-Channel PowerTrench® MOSFET Q1: 30 V, 66 A, 4 mΩ Q2: 30 V, 42 A, 5.5 mΩ Features General Description Q1: N-Channel This devices utilizes two optimized N-ch FETs in a dual 3.3x5mm thermally enhanced power package. The HS Source and LS Max rDS(on) = 4 mΩ at VGS = 10 V, ID = 19 A drain are internally connected providing a low source inductance Max rDS(on) =
5.1. fdmd86100.pdf Size:296K _upd-mosfet
February 2015 FDMD86100 Dual N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 39 A, 10.5 mΩ Features General Description Common source configuration to eliminate PCB routing This package integrates two N-Channel devices connected internally in common-source configuration and incorporates Large source pad on bottom of package for enhanced Shielded Gate technology. This enables v
5.2. fdmd85100.pdf Size:676K _upd-mosfet
March 2015 FDMD85100 Dual N-Channel PowerTrench® MOSFET Q1: 100 V, 48A, 9.9 mΩ Q2: 100 V, 48A, 9.9 mΩ Features General Description Q1: N-Channel This device includes two 100V N-Channel MOSFETs in a dual Power (5 mm X 6 mm) package. HS source and LS Drain Max rDS(on) = 9.9 mΩ at VGS = 10 V, ID = 10.4 A internally connected for half/full bridge, low source inductance Max rDS(on
5.3. fdmd84100.pdf Size:234K _fairchild_semi
January 2014 FDMD84100 Dual N-Channel PowerTrench® MOSFET 100 V, 21 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = 10 V, ID = 7 A This package integrates two N-Channel devices connected internally in common-source configuration. This enables very Max rDS(on) = 32 mΩ at VGS = 6 V, ID = 5.5 A low package parasitics and optimized thermal path to the Ideal fo
5.4. fdmd82100l.pdf Size:335K _fairchild_semi
June 2014 FDMD82100L Dual N-Channel PowerTrench® MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS(on) = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 30 mΩ at VGS = 4.5 V, ID = 5.7 A internally connected for half/full bridge, low source inductance
5.5. fdmd8280.pdf Size:538K _fairchild_semi
October 2014 FDMD8280 Dual N-Channel Power Trench® MOSFET 80 V, 40 A, 8.2 mΩ Features General Description Max rDS(on) = 8.2 mΩ at VGS = 10 V, ID = 11 A This device includes two 80V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 11 mΩ at VGS = 8 V, ID = 9.5 A internally connected for half/full bridge, low source inductance Ide
5.6. fdmd82100.pdf Size:274K _fairchild_semi
June 2014 FDMD82100 Dual N-Channel Power Trench® MOSFET 100 V, 25 A, 19 mΩ Features General Description Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A internally connected for half/full bridge, low source inductance Ideal
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