FDMS86568_F085 Todos los transistores

 

FDMS86568_F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDMS86568_F085

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 214 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Tiempo de elevación (tr): 20 nS

Conductancia de drenaje-sustrato (Cd): 1065 pF

Resistencia drenaje-fuente RDS(on): 0.0035 Ohm

Empaquetado / Estuche: Power56

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FDMS86568_F085 Datasheet (PDF)

1.1. fdms86568 f085.pdf Size:612K _upd-mosfet

FDMS86568_F085
FDMS86568_F085

December 2014 FDMS86568_F085 N-Channel PowerTrench® MOSFET 60 V, 80 A, 3.5 mΩ Features Typical RDS(on) = 2.6 mΩ at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

3.1. fdms86550et60.pdf Size:306K _upd-mosfet

FDMS86568_F085
FDMS86568_F085

January 2015 FDMS86550ET60 N-Channel PowerTrench® MOSFET 60 V, 245 A, 1.65 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175°C Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A been especially tailored to minimize the on-state resistance and yet maintain superior s

3.2. fdms86500dc.pdf Size:396K _fairchild_semi

FDMS86568_F085
FDMS86568_F085

July 2013 FDMS86500DC N-Channel Dual CoolTM Power Trench® MOSFET 60 V, 108 A, 2.3 mΩ Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Max rDS(on) = 2.3 mΩ at VGS = 10 V, ID = 29 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 mΩ at

 3.3. fdms86550.pdf Size:455K _fairchild_semi

FDMS86568_F085
FDMS86568_F085

April 2014 FDMS86550 N-Channel PowerTrench® MOSFET 60 V, 155 A, 1.65 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A been especially tailored to minimize the on-state resistance and Advanced Pa

3.4. fdms86500l.pdf Size:277K _fairchild_semi

FDMS86568_F085
FDMS86568_F085

March 2011 FDMS86500L N-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 m? Features General Description Max rDS(on) = 2.5 m? at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m? at VGS = 4.5 V, ID = 20 A ringing of DC/DC converters using either synchronous or Advanced Package an

 3.5. fdms86520.pdf Size:295K _fairchild_semi

FDMS86568_F085
FDMS86568_F085

October 2014 FDMS86520 N-Channel PowerTrench® MOSFET 60 V, 42 A, 7.4 mΩ Features General Description Max rDS(on) = 7.4 mΩ at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.3 mΩ at VGS = 8 V, ID = 12.5 A ringing of DC/DC converters using either synchronous or Advanced Pa

3.6. fdms86540.pdf Size:356K _fairchild_semi

FDMS86568_F085
FDMS86568_F085

October 2014 FDMS86540 N-Channel PowerTrench® MOSFET 60 V, 50 A, 3.4 mΩ Features General Description Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 mΩ at VGS = 8 V, ID = 18.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

3.7. fdms86520l.pdf Size:264K _fairchild_semi

FDMS86568_F085
FDMS86568_F085

April 2011 FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 m? Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.2 m? at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m? at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or conventional sw

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