FDMS86568F085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

December 2014FDMS86568_F085N-Channel PowerTrench MOSFET60 V, 80 A, 3.5 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/AlternatorForcu

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS86500LMOSFET, NChannel,POWERTRENCH)60 V, 158 A, 2.5 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency and to minimize switch node ringingof DC/DC converters using either synchronous or synchronous orSDconventional switching PWM controllers. It has been optimized forlow gate charge, low rDS(on),

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

October 2014FDMS86520N-Channel PowerTrench MOSFET60 V, 42 A, 7.4 mFeatures General Description Max rDS(on) = 7.4 m at VGS = 10 V, ID = 14 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.3 m at VGS = 8 V, ID = 12.5 Aringing of DC/DC converters using either synchronous or Advanced Pa

July 2013FDMS86500DCN-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 mFeatures General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using FairchildSemiconductors advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 AAdvancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

April 2014FDMS86550N-Channel PowerTrench MOSFET60 V, 155 A, 1.65 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 ASemiconductors advanced PowerTrench process that has Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 Abeen especially tailored to minimize the on-state resistance and Advanced Pa

October 2014FDMS86540N-Channel PowerTrench MOSFET60 V, 50 A, 3.4 mFeatures General Description Max rDS(on) = 3.4 m at VGS = 10 V, ID = 20 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 8 V, ID = 18.5 Aringing of DC/DC converters using either synchronous or Advanced Pac

January 2015FDMS86550ET60N-Channel PowerTrench MOSFET60 V, 245 A, 1.65 mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175CSemiconductors advanced PowerTrench process that has Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 Abeen especially tailored to minimize the on-state resistance and yet maintain superior s

April 2011FDMS86520LN-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 mFeatures General DescriptionThis N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.2 m at VGS = 10 V, ID = 13.5 Aimprove the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 Aringing of DC/DC converters using either synchronous or conventi

March 2011FDMS86500LN-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 mFeatures General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 Aringing of DC/DC converters using either synchronous or Advanced Pac

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDMS86500LMOSFET, NChannel,POWERTRENCH)60 V, 158 A, 2.5 mWGeneral Descriptionwww.onsemi.comThis N-Channel MOSFET has been designed specificallyto improve the overall efficiency and to minimize switch node ringingof DC/DC converters using either synchronous or synchronous orSDconventional switching PWM controllers. It has been optimized forlow gate charge, low rDS(on),

ON SemiconductorIs NowTo learn more about onsemi, please visit our website at www.onsemi.comonsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,