FDMS8662 Todos los transistores

 ..1. Size:216K  fairchild semi
 fdms8662.pdf

May 2009 FDMS8662 tm N-Channel PowerTrench MOSFET 30V, 49A, 2.0m Features General Description Max rDS(on) = 2.0m at VGS = 10V, ID = 28A The FDMS8662 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 3.0m at VGS = 4.5V, ID = 24A package technologies have been combined to offer the lowest Advanced Packa

 7.1. Size:237K  fairchild semi
 fdms8660as.pdf

May 2009 FDMS8660AS tm N-Channel PowerTrench SyncFETTM 30V, 49A, 2.1m Features General Description Max rDS(on) = 2.1m at VGS = 10V, ID = 28A The FDMS8660AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 3.1m at VGS = 4.5V, ID = 22A package technologies have been combined to offer the lowest Advance

 7.2. Size:428K  fairchild semi
 fdms8660s.pdf

June 2008 FDMS8660S tm N-Channel PowerTrench SyncFETTM 30V, 40A, 2.4m Features General Description The FDMS8660S has been designed to minimize losses in Max rDS(on) = 2.4m at VGS = 10V, ID = 25A power conversion applications. Advancements in both silicon Max rDS(on) = 3.5m at VGS = 4.5V, ID = 21A and package technologies have been combined to offer the Advanced Pack

 8.1. Size:399K  1
 fdms86252.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.2. Size:747K  1
 fdms86369-f085.pdf

2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

 8.3. Size:345K  1
 fdms86550.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.4. Size:441K  1
 fdms86102lz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.5. Size:519K  1
 fdms86200.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.6. Size:464K  1
 fdms86163p.pdf

DATA SHEET www.onsemi.com MOSFET P-Channel, BVDSS RDS(ON) MAX ID MAX POWERTRENCH) -100 V 22 mW @ -10 V -50 A -100 V, -50 A, 22 mW Top Bottom Pin 1 S FDMS86163P S S G General Description D D This P-Channel MOSFET is produced using onsemi s advanced D D Power 56 POWERTRENCH process that has been especially tailored to PQFN8 minimize the on-state resistance and yet main

 8.7. Size:453K  1
 fdms86201.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.8. Size:401K  1
 fdms86105.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.9. Size:358K  1
 fdms86150et100.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.10. Size:449K  1
 fdms86320.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.11. Size:424K  1
 fdms86540.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.12. Size:431K  1
 fdms86322.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.13. Size:463K  1
 fdms86250.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.14. Size:398K  1
 fdms86252l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.15. Size:402K  1
 fdms86182.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.16. Size:385K  1
 fdms86520l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.17. Size:505K  1
 fdms86500l.pdf

FDMS86500L MOSFET, N Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description www.onsemi.com This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or S D conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on),

 8.18. Size:554K  1
 fdms86380-f085.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 8.19. Size:464K  1
 fdms86183.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.20. Size:417K  1
 fdms86310.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.21. Size:538K  1
 fdms86581.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 8.22. Size:480K  1
 fdms86101.pdf

MOSFET - N Channel, POWERTRENCH) 100 V, 60 A, 8 mW FDMS86101 General Description This N-Channel MOSFET is produced using ON Semiconductor s www.onsemi.com advanced POWERTRENCH process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. S D Features D S Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A Max

 8.23. Size:406K  1
 fdms86263p.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.24. Size:402K  1
 fdms86104.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.25. Size:262K  fairchild semi
 fdms86252.pdf

August 2010 FDMS86252 N-Channel PowerTrench MOSFET 150 V, 16 A, 51 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 51 m at VGS = 10 V, ID = 4.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 70 m at VGS = 6 V, ID = 3.9 A been especially tailored to minimize the on-state resistance and yet maintain

 8.26. Size:295K  fairchild semi
 fdms86520.pdf

October 2014 FDMS86520 N-Channel PowerTrench MOSFET 60 V, 42 A, 7.4 m Features General Description Max rDS(on) = 7.4 m at VGS = 10 V, ID = 14 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 10.3 m at VGS = 8 V, ID = 12.5 A ringing of DC/DC converters using either synchronous or Advanced Pa

 8.27. Size:342K  fairchild semi
 fdms86255.pdf

December 2013 FDMS86255 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 45 A, 12.4 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This process has been Max rDS(on) = 1

 8.28. Size:283K  fairchild semi
 fdms8690.pdf

February 2007 FDMS8690 tm N-Channel Power Trench MOSFET 30V, 27A, 9.0m Features General Description Max rDS(on) = 9.0m at VGS = 10V, ID = 14.0A This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in Max rDS(on) = 12.5m at VGS = 4.5V, ID = 11.5A MOSFET construction, the various components of gate charge High

 8.29. Size:396K  fairchild semi
 fdms86500dc.pdf

July 2013 FDMS86500DC N-Channel Dual CoolTM Power Trench MOSFET 60 V, 108 A, 2.3 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process. Max rDS(on) = 2.3 m at VGS = 10 V, ID = 29 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m at

 8.30. Size:283K  fairchild semi
 fdms8670s.pdf

October 2014 FDMS8670S tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.5m Features General Description The FDMS8670S has been designed to minimize losses in Max rDS(on) = 3.5m at VGS = 10V, ID = 20A power conversion application. Advancements in both silicon and Max rDS(on) = 5.0m at VGS = 4.5V, ID = 17A package technologies have been combined to offer the lowest Adva

 8.31. Size:298K  fairchild semi
 fdms86150.pdf

November 2013 FDMS86150 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

 8.32. Size:455K  fairchild semi
 fdms86550.pdf

April 2014 FDMS86550 N-Channel PowerTrench MOSFET 60 V, 155 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 2.2 m at VGS = 8 V, ID = 27 A been especially tailored to minimize the on-state resistance and Advanced Pa

 8.33. Size:262K  fairchild semi
 fdms86103l.pdf

December 2010 FDMS86103L N-Channel PowerTrench MOSFET 100 V, 49 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 12 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 4.5 V, ID = 10 A been especially tailored to minimize the on-state resistance and Advanced

 8.34. Size:317K  fairchild semi
 fdms86102lz.pdf

May 2011 FDMS86102LZ N-Channel Power Trench MOSFET 100 V, 22 A, 25 m Features General Description Max rDS(on) = 25 m at VGS = 10 V, ID = 7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor's advanced Power Trench process Max rDS(on) = 37 m at VGS = 4.5 V, ID = 5.8 A that has been special tailored to minimize the on-state HBM ESD protection

 8.35. Size:272K  fairchild semi
 fdms86350.pdf

November 2013 FDMS86350 N-Channel PowerTrench MOSFET 80 V, 130 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 3.2 m at VGS = 8 V, ID = 22 A been especially tailored to minimize the on-state resistance and Advanced

 8.36. Size:290K  fairchild semi
 fdms8622.pdf

July 2011 FDMS8622 N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 m Features General Description Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A been optimized for rDS(on), switching performance and High performance trench

 8.37. Size:211K  fairchild semi
 fdms86200.pdf

Preliminary Datasheet April 2010 FDMS86200 N-Channel Power Trench MOSFET 150 V, 35 A, 18 m Features General Description Max rDS(on) = 18 m at VGS = 10 V, ID = 9.6 A This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced Power Trench process that has Max rDS(on) = 21 m at VGS = 6 V, ID = 8.8 A been especially tailored to minimize the on-state resistance

 8.38. Size:428K  fairchild semi
 fdms86163p.pdf

October 2014 FDMS86163P P-Channel PowerTrench MOSFET -100 V, -50 A, 22 m Features General Description Max rDS(on) = 22 m at VGS = -10 V, ID = -7.9 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 30 m at VGS = -6 V, ID = -5.9 A Semiconductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Very l

 8.39. Size:216K  fairchild semi
 fdms86201.pdf

Preliminary Datasheet April 2010 FDMS86201 N-Channel PowerTrench MOSFET 120 V, 35 A, 11.5 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 11.5 m at VGS = 10 V, ID = 11.6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 14.5 m at VGS = 6 V, ID = 10.7 A been especially tailored to minimize the on-state r

 8.40. Size:266K  fairchild semi
 fdms86105.pdf

January 2011 FDMS86105 N-Channel PowerTrench MOSFET 100 V, 26 A, 34 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 34 m at VGS = 10 V, ID = 6 A Semiconductor s advanced Power Trench process that has Max rDS(on) = 54 m at VGS = 6 V, ID = 4.5 A been especially tailored to minimize the on-state resistance and yet maintain s

 8.41. Size:316K  fairchild semi
 fdms86150et100.pdf

January 2015 FDMS86150ET100 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 128 A, 4.85 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This p

 8.42. Size:338K  fairchild semi
 fdms86320.pdf

October 2014 FDMS86320 N-Channel PowerTrench MOSFET 80 V, 44 A, 11.7 m Features General Description Max rDS(on) = 11.7 m at VGS = 10 V, ID = 10.5 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 15 m at VGS = 8 V, ID = 8.5 A ringing of DC/DC converters using either synchronous or Advanced P

 8.43. Size:356K  fairchild semi
 fdms86540.pdf

October 2014 FDMS86540 N-Channel PowerTrench MOSFET 60 V, 50 A, 3.4 m Features General Description Max rDS(on) = 3.4 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 4.1 m at VGS = 8 V, ID = 18.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

 8.44. Size:216K  fairchild semi
 fdms86322.pdf

October 2010 FDMS86322 N-Channel PowerTrench MOSFET 80 V, 60 A, 7.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7.65 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 12 m at VGS = 6 V, ID = 7.2 A been especially tailored to minimize the on-state resistance and Advanced P

 8.45. Size:237K  fairchild semi
 fdms8670.pdf

May 2009 FDMS8670 tm N-Channel Power Trench MOSFET 30V, 42A, 2.6m Features General Description Max rDS(on) = 2.6m at VGS = 10V, ID = 24A This N-Channel MOSFET is produced using Fairchild Semiconductor's latest proprietary Power Trench process that Max rDS(on) = 3.8m at VGS = 4.5V, ID = 18A has been especially tailored to minimize on-resistance. This part 100% UIL T

 8.46. Size:306K  fairchild semi
 fdms86550et60.pdf

January 2015 FDMS86550ET60 N-Channel PowerTrench MOSFET 60 V, 245 A, 1.65 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced PowerTrench process that has Max rDS(on) = 1.65 m at VGS = 10 V, ID = 32 A been especially tailored to minimize the on-state resistance and yet maintain superior s

 8.47. Size:317K  fairchild semi
 fdms86101a.pdf

October 2014 FDMS86101A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A incorporates Shielded Gate technology. This process has been optimized for the on-stat

 8.48. Size:354K  fairchild semi
 fdms86250.pdf

October 2014 FDMS86250 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 30 A, 25 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 25 m at VGS = 10 V, ID = 6.7 A incorporates Shielded Gate technology. This process has been optimized for the on-st

 8.49. Size:242K  fairchild semi
 fdms8672s.pdf

May 2009 FDMS8672S N-Channel PowerTrench SyncFETTM 30V, 35A, 5m Features General Description The FDMS8672S has been designed to minimize losses in Max rDS(on) = 5.0m at VGS = 10V, ID = 17A power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advanced Packa

 8.50. Size:341K  fairchild semi
 fdms86202.pdf

July 2014 FDMS86202 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 64 A, 7.2 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This process has been optimized for the on-s

 8.51. Size:290K  fairchild semi
 fdms86252l.pdf

October 2014 FDMS86252L N-Channel Shielded Gate PowerTrench MOSFET 150 V, 12 A, 56 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.4 A incorporates Shielded Gate technology. This process has been optimized for the on

 8.52. Size:372K  fairchild semi
 fdms86200dc.pdf

December 2013 FDMS86200DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 150 V, 40 A, 17 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) =

 8.53. Size:268K  fairchild semi
 fdms86150a.pdf

December 2014 FDMS86150A N-Channel Shielded Gate PowerTrench MOSFET 100 V, 80 A, 4.85 m Features General Description This N-Channel MOSFET is produced using Fairchild Shielded Gate MOSFET Technology Semiconductor s advanced PowerTrench process that Max rDS(on) = 4.85 m at VGS = 10 V, ID = 16 A incorporates Shielded Gate technology. This process has been optimized for the

 8.54. Size:264K  fairchild semi
 fdms86520l.pdf

April 2011 FDMS86520L N-Channel PowerTrench MOSFET 60 V, 22 A, 8.2 m Features General Description This N-Channel MOSFET has been designed specifically to Max rDS(on) = 8.2 m at VGS = 10 V, ID = 13.5 A improve the overall efficiency and to minimize switch node Max rDS(on) = 11.7 m at VGS = 4.5 V, ID = 11.5 A ringing of DC/DC converters using either synchronous or conventi

 8.55. Size:277K  fairchild semi
 fdms86500l.pdf

March 2011 FDMS86500L N-Channel PowerTrench MOSFET 60 V, 49 A, 2.5 m Features General Description Max rDS(on) = 2.5 m at VGS = 10 V, ID = 25 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 3.7 m at VGS = 4.5 V, ID = 20 A ringing of DC/DC converters using either synchronous or Advanced Pac

 8.56. Size:266K  fairchild semi
 fdms8680.pdf

October 2014 FDMS8680 tm N-Channel PowerTrench MOSFET 30V, 35A, 7.0m Features General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5A package technologies have been combined to offer the lowest Advance

 8.57. Size:234K  fairchild semi
 fdms8674.pdf

May 2009 FDMS8674 tm N-Channel PowerTrench MOSFET 30V, 21A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 17A The FDMS8674 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 8.0m at VGS = 4.5V, ID = 14A package technologies have been combined to offer the lowest Advanced Packa

 8.58. Size:496K  fairchild semi
 fdms86369 f085.pdf

March 2015 FDMS86369_F085 N-Channel PowerTrench MOSFET 80 V, 65 A, 7.5 m Features Typical RDS(on) = 5.9 m at VGS = 10V, ID = 65 A Typical Qg(tot) = 35 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For current

 8.59. Size:309K  fairchild semi
 fdms86310.pdf

October 2014 FDMS86310 N-Channel PowerTrench MOSFET 80 V, 50 A, 4.8 m Features General Description Max rDS(on) = 4.8 m at VGS = 10 V, ID = 17 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 6.7 m at VGS = 8 V, ID = 14 A ringing of DC/DC converters using either synchronous or Advanced Packa

 8.60. Size:251K  fairchild semi
 fdms8692.pdf

May 2009 FDMS8692 tm N-Channel PowerTrench MOSFET 30V, 28A, 9.0m Features General Description Max rDS(on) = 9.0m at VGS = 10V, ID = 12A The FDMS8692 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 14.0m at VGS = 4.5V, ID = 10.5A package technologies have been combined to offer the lowest Advanced Pa

 8.61. Size:239K  fairchild semi
 fdms8670as.pdf

May 2009 FDMS8670AS tm N-Channel PowerTrench SyncFETTM 30V, 42A, 3.0m Features General Description Max rDS(on) = 3.0m at VGS = 10V, ID = 23A The FDMS8670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 4.7m at VGS = 4.5V, ID = 18A package technologies have been combined to offer the lowest Advance

 8.62. Size:244K  fairchild semi
 fdms86300dc.pdf

December 2014 FDMS86300DC N-Channel Dual CoolTM PowerTrench MOSFET 80 V, 110 A, 3.1 m Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process. Max rDS(on) = 3.1 m at VGS = 10 V, ID = 24 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 4.0 m a

 8.63. Size:242K  fairchild semi
 fdms86152.pdf

February 2013 FDMS86152 N-Channel PowerTrench MOSFET 100 V, 45 A, 6 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 6 m at VGS = 10 V, ID = 14 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 11 m at VGS = 6 V, ID = 11.5 A been especially tailored to minimize the on-state resistance and Advanced P

 8.64. Size:407K  fairchild semi
 fdms86101dc.pdf

July 2013 FDMS86101DC N-Channel Dual CoolTM Shielded Gate PowerTrench MOSFET 100 V, 60 A, 7.5 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Dual CoolTM Top Side Cooling PQFN package incorporates Shielded Gate technology. Advancements in both Max rDS(on) = 7.5

 8.65. Size:303K  fairchild semi
 fdms86255et150.pdf

January 2015 FDMS86255ET150 N-Channel Shielded Gate PowerTrench MOSFET 150 V, 63 A, 12.4 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 12.4 m at VGS = 10 V, ID = 10 A incorporates Shielded Gate technology. This

 8.66. Size:278K  fairchild semi
 fdms86101.pdf

October 2010 FDMS86101 N-Channel PowerTrench MOSFET 100 V, 60 A, 8 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 8 m at VGS = 10 V, ID = 13 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 13.5 m at VGS = 6 V, ID = 9.5 A been especially tailored to minimize the on-state resistance and Advanced P

 8.67. Size:535K  fairchild semi
 fdms86368 f085.pdf

December 2014 FDMS86368_F085 N-Channel PowerTrench MOSFET 80 V, 80 A, 4.5 m Features Typical RDS(on) = 3.7 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 57 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

 8.68. Size:314K  fairchild semi
 fdms86202et120.pdf

January 2015 FDMS86202ET120 N-Channel Shielded Gate PowerTrench MOSFET 120 V, 102 A, 7.2 m Features Extended TJ rating to 175 C General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 7.2 m at VGS = 10 V, ID = 13.5 A incorporates Shielded Gate technology. This p

 8.69. Size:295K  fairchild semi
 fdms86263p.pdf

October 2014 FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 m Features General Description Max rDS(on) = 53 m at VGS = -10 V, ID = -4.4 A This P-Channel MOSFET is produced using Fairchild Max rDS(on) = 64 m at VGS = -6 V, ID = -4 A Semiconductor s advanced PowerTrench technology. This very high density process is especially tailored to minimize Very low Rds-

 8.70. Size:243K  fairchild semi
 fdms8672as.pdf

May 2009 FDMS8672AS tm N-Channel PowerTrench SyncFETTM 30V, 28A, 5.0m Features General Description Max rDS(on) = 5.0m at VGS = 10V, ID = 18A The FDMS8672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 7.0m at VGS = 4.5V, ID = 15A package technologies have been combined to offer the lowest Advance

 8.71. Size:267K  fairchild semi
 fdms86300.pdf

August 2011 FDMS86300 N-Channel PowerTrench MOSFET 80 V, 42 A, 3.9 m Features General Description Max rDS(on) = 3.9 m at VGS = 10 V, ID = 19 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 5.5 m at VGS = 8 V, ID = 15.5 A ringing of DC/DC converters using either synchronous or Advanced Pac

 8.72. Size:296K  fairchild semi
 fdms86104.pdf

July 2010 FDMS86104 N-Channel PowerTrench MOSFET 100 V, 16 A, 24 m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 24 m at VGS = 10 V, ID = 7 A Semiconductor s advanced Power Trench process thant has Max rDS(on) = 39 m at VGS = 6 V, ID = 5.5 A been especially tailored to minimize the on-state resistance and Advanced Packa

 8.73. Size:306K  fairchild semi
 fdms86350et80.pdf

January 2015 FDMS86350ET80 N-Channel PowerTrench MOSFET 80 V, 198 A, 2.4 m Features General Description This N-Channel MOSFET is produced using Fairchild Extended TJ rating to 175 C Semiconductor s advanced Power Trench process that has Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A been especially tailored to minimize the on-state resistance and yet maintain superior sw

 8.74. Size:612K  fairchild semi
 fdms86568 f085.pdf

December 2014 FDMS86568_F085 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.5 m Features Typical RDS(on) = 2.6 m at VGS = 10V, ID = 80 A Typical Qg(tot) = 55 nC at VGS = 10V, ID = 80 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Integrated Starter/Alternator For cu

 8.75. Size:399K  onsemi
 fdms86252.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.76. Size:348K  onsemi
 fdms86255.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.77. Size:747K  onsemi
 fdms86369-f085.pdf

2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 1/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u=5oefqw 2/6 2021/8/6 ONSM-S-A0003584697-1.pdf https //rocelec.widen.net/view/pdf/c0oupbqi6k/ONSM-S-A0003584697-1.pdf?t.download=true&u

 8.78. Size:353K  onsemi
 fdms86150.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.79. Size:408K  onsemi
 fdms86103l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.80. Size:620K  onsemi
 fdms86350.pdf

FDMS86350 N-Channel PowerTrench MOSFET General Description 80 V, 130 A, 2.4 m This N-Channel MOSFET is produced using ON Semiconductor s advanced Power Trench process that has Features been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Max rDS(on) = 2.4 m at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 m at VGS = 8

 8.81. Size:571K  onsemi
 fdms8622.pdf

August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench MOSFET 100 V, 16.5 A, 56 m Features General Description Shielded Gate MOSFET Technology This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced PowerTrench process that Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A incorporates Shielded Gate technology. This process has been Max rDS(o

 8.82. Size:519K  onsemi
 fdms86200.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.83. Size:424K  onsemi
 fdms86540.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.84. Size:431K  onsemi
 fdms86322.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.85. Size:348K  onsemi
 fdms86550et60.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.86. Size:426K  onsemi
 fdms86101a.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.87. Size:518K  onsemi
 fdms86368-f085.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 8.88. Size:326K  onsemi
 fdms86180.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.89. Size:463K  onsemi
 fdms86250.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.90. Size:386K  onsemi
 fdms86202.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.91. Size:398K  onsemi
 fdms86252l.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.92. Size:402K  onsemi
 fdms86182.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.93. Size:913K  onsemi
 fdms86200dc.pdf

MOSFET - PowerTrench), N-Channel, Dual CoolE, Shielded Gate 150 V, 40 A, 17 mW FDMS86200DC www.onsemi.com General Description This N-Channel MOSFET is produced using ON Semiconductor s ELECTRICAL CONNECTION advanced PowerTrench process that incorporates Shielded Gate technology. Advancements in both silicon and Dual CoolTM package S D technologies have been combined to offer the

 8.94. Size:505K  onsemi
 fdms86500l.pdf

FDMS86500L MOSFET, N Channel, POWERTRENCH) 60 V, 158 A, 2.5 mW General Description www.onsemi.com This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or synchronous or S D conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on),

 8.95. Size:464K  onsemi
 fdms86183.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.96. Size:417K  onsemi
 fdms86310.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.97. Size:408K  onsemi
 fdms86181.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.98. Size:461K  onsemi
 fdms86381-f085.pdf

FDMS86381-F085 N-Channel PowerTrench MOSFET 80 V, 30 A, 22 m Features Typical RDS(on) = 17.2 m at VGS = 10V, ID = 30 A Typical Qg(tot) = 14 nC at VGS = 10V, ID = 30 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drivers Electronic Steering Integrated Starter/Alternator D

 8.99. Size:206K  onsemi
 fdms86300dc.pdf

FDMS86300DC POWERTRENCH) MOSFET, N-Channel, DUAL COOL) 56 80 V, 110 A, 3.1 mW General Description www.onsemi.com This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL package technologies have been combined to S D offer the lowes

 8.100. Size:538K  onsemi
 fdms86581.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 8.101. Size:468K  onsemi
 fdms86101dc.pdf

MOSFET - N-Channel, POWERTRENCH), DUAL COOL) 56 Shielded Gate 100 V, 60 A, 7.5 mW FDMS86101DC www.onsemi.com General Description This N-Channel MOSFET is produced using Fairchild Semiconductor s advanced POWERTRENCH process that ELECTRICAL CONNECTION incorporates Shielded Gate technology. Advancements in both silicon S D and DUAL COOL package technologies have been combined to

 8.102. Size:345K  onsemi
 fdms86255et150.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.103. Size:548K  onsemi
 fdms86101.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.104. Size:356K  onsemi
 fdms86202et120.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.105. Size:452K  onsemi
 fdms86300.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.106. Size:347K  onsemi
 fdms86350et80.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur