FDP15N50 Todos los transistores

 

FDP15N50 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDP15N50
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.4 nS
   Cossⓘ - Capacitancia de salida: 230 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-220AB
 

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FDP15N50 Datasheet (PDF)

 ..1. Size:194K  fairchild semi
 fdh15n50 fdp15n50 fdb15n50.pdf pdf_icon

FDP15N50

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 ..2. Size:181K  fairchild semi
 fdh15n50 fdp15n50.pdf pdf_icon

FDP15N50

August 2003FDH15N50 / FDP15N50 / FDB15N5015A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFETApplications Features Low Gate Charge Qg results in Simple DriveSwitch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward ConverterRuggedness Single Switch Forward Converter Reduced rDS(ON)

 8.1. Size:490K  fairchild semi
 fdp15n65 fdpf15n65.pdf pdf_icon

FDP15N50

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

 8.2. Size:457K  fairchild semi
 fdp15n65 fdpf15n65ydtu.pdf pdf_icon

FDP15N50

April 2007TMUniFETFDP15N65 / FDPF15N65 650V N-Channel MOSFETFeatures Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 48.5 nC)stripe, DMOS technology. Low Crss ( typical 23.6 pF)This advanced technology has been especia

MOSTRAR MÁS

Otros transistores... FDN336P-NL , FDN359BNF095 , FDN86501LZ , FDP020N06BF102 , FDP10AN06A0 , FDP120AN15A0 , FDP13AN06A0 , FDP14AN06LA0 , IRFP260 , FDP15N65 , FDP16N50 , FDP20AN06A0 , FDP24AN06LA0 , FDP2570 , FDP2670 , FDP3205 , FDP5500 .

History: PHB222NQ04LT | PA5S6EA | CSD17573Q5B | SPD07N60C3 | AP4407GP | VBZA4407 | HY050N08P

 

 
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