FDP15N65 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDP15N65
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 125 nS
Cossⓘ - Capacitancia de salida: 295 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.44 Ohm
Encapsulados: TO-220
Búsqueda de reemplazo de FDP15N65 MOSFET
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FDP15N65 datasheet
fdp15n65 fdpf15n65.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia
fdp15n65 fdpf15n65ydtu.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia
fdp15n65 fdpf15n65.pdf
April 2007 TM UniFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features Description 15A, 650V, RDS(on) = 0.44 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 48.5 nC) stripe, DMOS technology. Low Crss ( typical 23.6 pF) This advanced technology has been especia
fdh15n50 fdp15n50 fdb15n50.pdf
August 2003 FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Low Gate Charge Qg results in Simple Drive Switch Mode Power Supplies(SMPS), such as Requirement PFC Boost Improved Gate, Avalanche and High Reapplied dv/dt Two-Switch Forward Converter Ruggedness Single Switch Forward Converter Reduced rDS(ON)
Otros transistores... FDN359BNF095, FDN86501LZ, FDP020N06BF102, FDP10AN06A0, FDP120AN15A0, FDP13AN06A0, FDP14AN06LA0, FDP15N50, STP75NF75, FDP16N50, FDP20AN06A0, FDP24AN06LA0, FDP2570, FDP2670, FDP3205, FDP5500, FDP5645
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