FDP5500 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDP5500
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 375 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 34 nS
   Cossⓘ - Capacitancia de salida: 1310 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET FDP5500

FDP5500 Datasheet (PDF)

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fdp5500.pdf

April 2009FDP5500_F085N-Channel UltraFET Power MOSFET55V, 80A, 7m Applications Features Typ rDS(on) = 5.1m at VGS = 10V, ID = 80A DC Linear Mode Control Typ Qg(10) = 114nC at VGS = 10V Solenoid and Motor Control Simulation Models Switching Regulators -Temperature Compensated PSPICE and SABERTM Automotive SystemsModels Peak Current vs Pulse Width Curve UIS Ra

..2. Size:458K fairchild semi
fdp5500 f085.pdf

9.1. Size:1209K fairchild semi
fdp55n06 fdpf55n06.pdf

TMUniFETFDP55N06/FDPF55N0660V N-Channel MOSFETFeatures Description 55A, 60V, RDS(on) = 0.022 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 30 nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss ( typical 60 pF)This advanced technology has been especially tailored to

9.2. Size:1519K onsemi
fdp55n06 fdpf55n06.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

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