FDPC5030SG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDPC5030SG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 23 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 56 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 39 nC
Tiempo de subida (tr): 2 nS
Conductancia de drenaje-sustrato (Cd): 397 pF
Resistencia entre drenaje y fuente RDS(on): 0.005 Ohm
Paquete / Cubierta: POWERCLIP5X6
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FDPC5030SG Datasheet (PDF)
fdpc5030sg.pdf
May 2015FDPC5030SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4
fdpc5030sg.pdf
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fdpc5018sg.pdf
May 2015FDPC5018SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4
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