FDPC5030SG Todos los transistores

 

FDPC5030SG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPC5030SG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 23 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 56 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 397 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
   Paquete / Cubierta: POWERCLIP5X6
 

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FDPC5030SG Datasheet (PDF)

 ..1. Size:560K  fairchild semi
fdpc5030sg.pdf pdf_icon

FDPC5030SG

May 2015FDPC5030SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4

 ..2. Size:531K  onsemi
fdpc5030sg.pdf pdf_icon

FDPC5030SG

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 8.1. Size:578K  fairchild semi
fdpc5018sg.pdf pdf_icon

FDPC5030SG

May 2015FDPC5018SGPowerTrench Power Clip 30V Asymmetric Dual N-Channel MOSFETFeatures General DescriptionQ1: N-ChannelThis device includes two specialized N-Channel MOSFETs in a dual package. The switch node has been internally connected to Max rDS(on) = 5.0 m at VGS = 10 V, ID = 17 Aenable easy placement and routing of synchronous buck Max rDS(on) = 6.5 m at VGS = 4

Otros transistores... FDP75N08 , FDP79N15 , FDP8441F085 , FDP8442 , FDP8443 , FDP8878 , FDP8N50NZU , FDPC5018SG , IRLZ44N , FDPF12N35 , FDPF12N50NZT , FDPF14N30T , FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 .

History: 2SK526 | AOD2904 | SL20N10

 

 
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