FDPF14N30T Todos los transistores

 

FDPF14N30T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF14N30T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 300 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 14 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 105 nS
   Cossⓘ - Capacitancia de salida: 150 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO-220F
 

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FDPF14N30T Datasheet (PDF)

 ..1. Size:362K  fairchild semi
fdpf14n30t.pdf pdf_icon

FDPF14N30T

February 2007TMUniFETFDP14N30 / FDPF14N30300V N-Channel MOSFETFeatures Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 18 nC)stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall

 5.1. Size:483K  fairchild semi
fdp14n30 fdpf14n30.pdf pdf_icon

FDPF14N30T

February 2007TMUniFETFDP14N30 / FDPF14N30300V N-Channel MOSFETFeatures Description 14A, 300V, RDS(on) = 0.29 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 18 nC)stripe, DMOS technology. Low Crss ( typical 17 pF)This advanced technology has been especiall

 5.2. Size:388K  onsemi
fdpf14n30.pdf pdf_icon

FDPF14N30T

November 2013FDPF14N30N-Channel UniFETTM MOSFET300 V, 14 A, 290 mFeatures DescriptionUniFETTM MOSFET is Fairchild Semiconductors high voltage RDS(on) = 290 m (Max.) @ VGS = 10 V, ID = 7 AMOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 18 nC)This MOSFET is tailored to reduce on-state resistance, and toprovide better switching perfo

 9.1. Size:427K  fairchild semi
fdpf12n35.pdf pdf_icon

FDPF14N30T

April 2007 TMUniFETFDP12N35 / FDPF12N35 350V N-Channel MOSFETFeatures Description 12A, 350V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchilds proprietary, planar Low Crss ( typical 15 pF) stripe, DMOS technology. Fast switchingThis advanced technology h

Otros transistores... FDP8442 , FDP8443 , FDP8878 , FDP8N50NZU , FDPC5018SG , FDPC5030SG , FDPF12N35 , FDPF12N50NZT , IRFP450 , FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 , FDPF7N50F , FDPF8N50NZT , FDR6580 .

History: FDPF12N35 | PDN2312S | WMN36N65F2 | BSC025N08LS5 | IPAN60R280PFD7S | STB46N30M5 | PDN2309S

 

 
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