FDPF52N20T Todos los transistores

 ..1. Size:1179K  fairchild semi
 fdpf52n20t.pdf

October 2007 UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049 Features Description RDS(on) = 0.041 ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 49nC) DMOS technology. Low Crss ( Typ. 66pF) This advance technology h

 ..2. Size:1196K  fairchild semi
 fdp52n20 fdpf52n20t.pdf

October 2007 UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049 Features Description RDS(on) = 0.041 ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 49nC) DMOS technology. Low Crss ( Typ. 66pF) This advance technology h

 9.1. Size:265K  fairchild semi
 fdp5n50 fdpf5n50.pdf

December 2007 UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4 Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced technology has bee

 9.2. Size:265K  fairchild semi
 fdp5n60nz fdpf5n60nz.pdf

November 2010 TM UniFET-II FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low Gate Charge ( Typ. 10nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced techno

 9.3. Size:1209K  fairchild semi
 fdp55n06 fdpf55n06.pdf

 9.4. Size:247K  fairchild semi
 fdp5n50nz fdpf5n50nz.pdf

March 2010 UniFET-IITM FDP5N50NZ / FDPF5N50NZ tm N-Channel MOSFET 500V, 4.5A, 1.5 Features Description RDS(on) = 1.38 (Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transis tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge (Typ. 9nC) DMOS technology. Low Crss (Typ. 4pF) This advance technology has b

 9.5. Size:580K  fairchild semi
 fdpf5n50t.pdf

November 2013 FDPF5N50T N-Channel UniFETTM MOSFET 500 V, 5 A, 1.4 Features Description RDS(on) = 1.15 (Typ.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 11 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 5 pF) provi

 9.6. Size:650K  fairchild semi
 fdpf51n25rdtu.pdf

August 2014 FDP51N25 / FDPF51N25 N-Channel UniFETTM MOSFET 250 V, 51 A, 60 m Features Description RDS(on) = 48 m (Typ.) @ VGS = 10 V, ID = 25.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. Low Gate Charge (Typ. 55 nC) This MOSFET is tailored to reduce on-state resistance, and to Low Crss (Typ. 6

 9.7. Size:256K  fairchild semi
 fdp5n50nzf fdpf5n50nzf.pdf

February 2010 TM UniFET-II FDP5N50NZF / FDPF5N50NZF tm N-Channel MOSFET 500V, 4.2A, 1.75 Features Description RDS(on) = 1.57 ( Typ.)@ VGS = 10V, ID = 2.1A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advanc

 9.8. Size:427K  fairchild semi
 fdp5n50f fdpf5n50ft.pdf

December 2007 UniFETTM FDP5N50F / FDPF5N50FT tm N-Channel MOSFET, FRFET 500V, 4.5A, 1.55 Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( Typ. 11nC) stripe, DMOS technology. Low Crss ( Typ. 5pF) This advanced tech

 9.9. Size:224K  fairchild semi
 fdp5n50u fdpf5n50ut.pdf

November2009 TM Ultra FRFET FDP5N50U / FDPF5N50UT tm N-Channel MOSFET, FRFET 500V, 4A, 2.0 Features Description RDS(on) = 1.65 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 11nC) DOMS technology. Low Crss ( Typ. 5pF) This advance tech

 9.10. Size:702K  fairchild semi
 fdp5n50nzu fdpf5n50nzu.pdf

February 2010 TM UniFET-II FDP5N50NZU / FDPF5N50NZU tm N-Channel MOSFET 500V, 3.9A, 2.0 Features Description RDS(on) = 1.7 ( Typ.)@ VGS = 10V, ID = 1.95A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low Gate Charge ( Typ. 9nC) DMOS technology. Low Crss ( Typ. 4pF) This advance

 9.11. Size:2977K  fairchild semi
 fdp51n25 fdpf51n25.pdf

July 2008 UniFETTM FDP51N25 / FDPF51N25 250V N-Channel MOSFET Features Description 51A, 250V, RDS(on) = 0.06 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 55 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 63 pF) stripe, DMOS technology. Fast switching This advanced technology has

 9.12. Size:750K  onsemi
 fdp5n60nz fdpf5n60nz.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.13. Size:948K  onsemi
 fdpf5n50nzu.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.14. Size:1519K  onsemi
 fdp55n06 fdpf55n06.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.15. Size:1763K  onsemi
 fdp5n50nz fdpf5n50nz.pdf

 9.16. Size:688K  onsemi
 fdpf5n50t.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.17. Size:1193K  onsemi
 fdp51n25 fdpf51n25.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.18. Size:200K  inchange semiconductor
 fdpf51n25.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor FDPF51N25 FEATURES With TO-220F package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT