FDPF7N50 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDPF7N50

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 39 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 95 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm

Encapsulados: TO-220F

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FDPF7N50 datasheet

 ..1. Size:1019K  fairchild semi
 fdp7n50 fdpf7n50.pdf pdf_icon

FDPF7N50

April 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo

 ..2. Size:375K  fairchild semi
 fdpf7n50 fdpf7n50f.pdf pdf_icon

FDPF7N50

March 2007 TM UniFET FDP7N50/FDPF7N50 500V N-Channel MOSFET Features Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar Low gate charge ( typical 12.8 nC) stripe, DMOS technology. Low Crss ( typical 9 pF) This advanced technology has been especially tailo

 0.1. Size:1264K  fairchild semi
 fdpf7n50u.pdf pdf_icon

FDPF7N50

November 2013 FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductor s high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC) MOSFET is tailored to reduce on-state resistance, and

 0.2. Size:543K  fairchild semi
 fdp7n50f fdpf7n50f.pdf pdf_icon

FDPF7N50

November 2007 UniFETTM FDP7N50F / FDPF7N50F tm N-Channel MOSFET, FRFET 500V, 6A, 1.15 Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( Typ. 15nC) DMOS technology. Low Crss ( Typ. 6.3pF) This advance technolo

MOSTRAR MÁS

Otros transistores... FDPC5030SG, FDPF12N35, FDPF12N50NZT, FDPF14N30T, FDPF15N65YDTU, FDPF18N20F, FDPF52N20T, FDPF79N15, AO4407, FDPF7N50F, FDPF8N50NZT, FDR6580, FDR6674A, FDR840P, FDR842P, FDR844P, FDS2070N3