FDPF7N50F Todos los transistores

 

FDPF7N50F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FDPF7N50F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 39 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 55 nS
   Cossⓘ - Capacitancia de salida: 95 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-220F
 

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FDPF7N50F Datasheet (PDF)

 ..1. Size:375K  fairchild semi
 fdpf7n50 fdpf7n50f.pdf pdf_icon

FDPF7N50F

March 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

 ..2. Size:543K  fairchild semi
 fdp7n50f fdpf7n50f.pdf pdf_icon

FDPF7N50F

November 2007UniFETTMFDP7N50F / FDPF7N50FtmN-Channel MOSFET, FRFET500V, 6A, 1.15Features Description RDS(on) = 0.95 ( Typ.)@ VGS = 10V, ID = 3A These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge ( Typ. 15nC)DMOS technology. Low Crss ( Typ. 6.3pF)This advance technolo

 6.1. Size:1019K  fairchild semi
 fdp7n50 fdpf7n50.pdf pdf_icon

FDPF7N50F

April 2007TMUniFETFDP7N50/FDPF7N50 500V N-Channel MOSFETFeatures Description 7A, 500V, RDS(on) = 0.9 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 12.8 nC)stripe, DMOS technology. Low Crss ( typical 9 pF)This advanced technology has been especially tailo

 6.2. Size:1264K  fairchild semi
 fdpf7n50u.pdf pdf_icon

FDPF7N50F

November 2013FDPF7N50U / FDPF7N50U_G N-Channel UniFETTM Ultra FRFETTM MOSFET 500 V, 5 A, 1.5 Features Description RDS(on) = 1.5 (Max.) @ VGS = 10 V, ID = 2.5 A UniFETTM MOSFET is Fairchild Semiconductors high voltage MOSFET family based on planar stripe and DMOS technology. This Low Gate Charge (Typ. 12.8 nC)MOSFET is tailored to reduce on-state resistance, and

MOSTRAR MÁS

Otros transistores... FDPF12N35 , FDPF12N50NZT , FDPF14N30T , FDPF15N65YDTU , FDPF18N20F , FDPF52N20T , FDPF79N15 , FDPF7N50 , 18N50 , FDPF8N50NZT , FDR6580 , FDR6674A , FDR840P , FDR842P , FDR844P , FDS2070N3 , FDS2070N7 .

History: 2SK818 | PZ5203QV | HTD2K1P10 | 2SK4212-ZK | FKP253 | PTF8N65 | BRCS120N03DP

 

 
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