IRFR014 Todos los transistores

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 irfr010 irfr012 irfr014 irfr015.pdf

 ..2. Size:172K  international rectifier
 irfr014.pdf

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 irfr014pbf irfu014pbf.pdf

PD-95065A IRFR014PbF IRFU014PbF Lead-Free 12/10/04 Document Number 91263 www.vishay.com 1 IRFR/U014PbF Document Number 91263 www.vishay.com 2 IRFR/U014PbF Document Number 91263 www.vishay.com 3 IRFR/U014PbF Document Number 91263 www.vishay.com 4 IRFR/U014PbF Document Number 91263 www.vishay.com 5 IRFR/U014PbF Document Number 91263 www.vishay.com 6 IRFR/U014

 ..4. Size:888K  vishay
 irfr014 irfu014 sihfr014 sihfu014.pdf

IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014) DPAK IPAK Straight lead (IRFU014, SiHFU014) (TO-252) (TO-251) D Available in tape and reel G D Available Fast switching Ease of paralleling S G S D Simple drive requirements G S Material categor

 ..5. Size:1947K  vishay
 irfr014pbf irfu014pbf sihfr014 sihfu014.pdf

IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014) Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014) Qgs (nC) 3.1 Available in Tape and Reel Qgd (nC) 5.8 Fast Switching

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 irfu014a irfr014a.pdf

 0.2. Size:494K  samsung
 irfr014a.pdf

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.2 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.097 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

 8.1. Size:279K  international rectifier
 irfr010 irfr012 irfu010 irfu012.pdf

 8.2. Size:309K  vishay
 irfr010 sihfr010.pdf

IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Qgs (nC) 2.6 Excellent Temperature Stability Qgd (nC) 4.8 Material categorization For definitions of compliance please see www.vishay.com/doc?

 8.3. Size:1696K  vishay
 irfr010pbf sihfr010.pdf

IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgs (nC) 2.6 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 4.8 Configuration Single DESCRIPTION The Power MOSFET technology i