IRFR014 Todos los transistores

PD-95065A IRFR014PbF IRFU014PbF Lead-Free 12/10/04 Document Number 91263 www.vishay.com 1 IRFR/U014PbF Document Number 91263 www.vishay.com 2 IRFR/U014PbF Document Number 91263 www.vishay.com 3 IRFR/U014PbF Document Number 91263 www.vishay.com 4 IRFR/U014PbF Document Number 91263 www.vishay.com 5 IRFR/U014PbF Document Number 91263 www.vishay.com 6 IRFR/U014

IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014) DPAK IPAK Straight lead (IRFU014, SiHFU014) (TO-252) (TO-251) D Available in tape and reel G D Available Fast switching Ease of paralleling S G S D Simple drive requirements G S Material categor

IRFR014, IRFU014, SiHFR014, SiHFU014 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 60 Definition RDS(on) ( )VGS = 10 V 0.20 Dynamic dV/dt Rating Surface Mount (IRFR014, SiHFR014) Qg (Max.) (nC) 11 Straight Lead (IRFU014, SiHFU014) Qgs (nC) 3.1 Available in Tape and Reel Qgd (nC) 5.8 Fast Switching

Advanced Power MOSFET FEATURES BVDSS = 60 V Avalanche Rugged Technology RDS(on) = 0.14 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8.2 A Improved Gate Charge Extended Safe Operating Area A Lower Leakage Current 10 (Max.) @ VDS = 60V Lower RDS(ON) 0.097 (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Chara

IRFR010, SiHFR010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Qgs (nC) 2.6 Excellent Temperature Stability Qgd (nC) 4.8 Material categorization For definitions of compliance please see www.vishay.com/doc?

IRFR010, SiHFR010 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Drive Current VDS (V) 50 Surface Mount RDS(on) ( )VGS = 10 V 0.20 Fast Switching Qg (Max.) (nC) 10 Ease of Paralleling Excellent Temperature Stability Qgs (nC) 2.6 Compliant to RoHS Directive 2002/95/EC Qgd (nC) 4.8 Configuration Single DESCRIPTION The Power MOSFET technology i