FDS7088SN3 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS7088SN3
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 890 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm
Encapsulados: SO-8
Búsqueda de reemplazo de FDS7088SN3 MOSFET
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FDS7088SN3 datasheet
fds7088sn3.pdf
August 2004 FDS7088SN3 30V N-Channel PowerTrench SyncFET General Description Features The FDS7088SN3 is designed to replace a single SO-8 21 A, 30 V RDS(ON) = 4.0 m @ VGS = 10 V FLMP MOSFET and Schottky diode in synchronous RDS(ON) = 4.9 m @ VGS = 4.5 V DC DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a
fds7088n7.pdf
February 2004 FDS7088N7 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 23 A, 30 V RDS(ON) = 3 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 4 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe
fds7088n3.pdf
February 2004 FDS7088N3 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 21 A, 30 V RDS(ON) = 4 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized for High pe
Otros transistores... FDS7064SN3, FDS7066ASN3, FDS7066N3, FDS7066N7, FDS7079ZN3, FDS7082N3, FDS7088N3, FDS7088N7, IRFB4110, FDS7096N3, FDS7098N3, FDS7288N3, FDS7296N3, FDS7760A, FDS7764S, FDS7779Z, FDS7788
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