FDS7779Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FDS7779Z
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 980 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0072 Ohm
   Paquete / Cubierta: SO-8

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FDS7779Z Datasheet (PDF)

..1. Size:293K fairchild semi
fds7779z.pdf

October 2003 FDS7779Z 30 Volt P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been designed 16 A, 30 V. RDS(ON) = 7.2 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 11.5 m @ VGS = 4.5 V converters using either synchronous or conventional switching PWM controllers, and battery charge

9.1. Size:73K fairchild semi
fds7760a.pdf

January 2002 FDS7760A N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET is produced 15 A, 30 V. RDS(ON) = 5.5 m @ VGS = 10 Vusing Fairchild Semiconductors advanced RDS(ON) = 8 m @ VGS = 4.5 V. PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain Low gate

9.2. Size:417K fairchild semi
fds7788.pdf

August 2008FDS778830V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 18 A, 30 V. RDS(ON) = 4.0 m @ VGS = 10 Vspecifically to improve the overall efficiency of DC/DCRDS(ON) = 5.0 m @ VGS = 4.5 Vconverters using either synchronous or conventionalswitching PWM controllers. It has been optimized for Low gate charge

9.3. Size:125K fairchild semi
fds7764s.pdf

September 2002 FDS7764S 30V N-Channel PowerTrench SyncFET General Description Features The FDS7764S is designed to replace a single SO-8 13.5 A, 30 V. RDS(ON) = 7.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) = 9.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, provi

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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