FDS8812NZ MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FDS8812NZ

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 945 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.004 Ohm

Encapsulados: SO-8

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FDS8812NZ datasheet

 ..1. Size:446K  fairchild semi
 fds8812nz.pdf pdf_icon

FDS8812NZ

November 2008 FDS8812NZ N-Channel PowerTrench MOSFET 30V, 20A, 4.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection

 ..2. Size:1434K  cn vbsemi
 fds8812nz.pdf pdf_icon

FDS8812NZ

FDS8812NZ www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.004 at VGS = 10 V 18 30 6.8 nC Optimized for High-Side Synchronous 0.005 at VGS = 4.5 V 16 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch

 8.1. Size:306K  fairchild semi
 fds8817nz.pdf pdf_icon

FDS8812NZ

November 2008 FDS8817NZ N-Channel PowerTrench MOSFET 30V, 15A, 7.0m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve

 8.2. Size:335K  fairchild semi
 fds8813nz.pdf pdf_icon

FDS8812NZ

November 2008 FDS8813NZ N-Channel PowerTrench MOSFET 30V, 18.5A, 4.5m Features General Description This N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5A Semiconductor s advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect

MOSTRAR MÁS

Otros transistores... FDS7098N3, FDS7288N3, FDS7296N3, FDS7760A, FDS7764S, FDS7779Z, FDS7788, FDS8670, P55NF06, FDS8874, FDS9412A, FDT3N40TF, FDT461N, FDT55AN06LA0, FDU044AN03L, FDU068AN03L, FDU2572