FDS8812NZ MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FDS8812NZ
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 2.5 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 20 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 90 nC
Tiempo de subida (tr): 13 nS
Conductancia de drenaje-sustrato (Cd): 945 pF
Resistencia entre drenaje y fuente RDS(on): 0.004 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MOSFET FDS8812NZ
FDS8812NZ Datasheet (PDF)
fds8812nz.pdf
November 2008FDS8812NZN-Channel PowerTrench MOSFET 30V, 20A, 4.0mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.0m at VGS = 10V, ID = 20ASemiconductors advanced PowerTrench process that has Max rDS(on) = 4.9m at VGS = 4.5V, ID =18A been especially tailored to minimize the on-state resistance. HBM ESD protection
fds8812nz.pdf
FDS8812NZwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.004 at VGS = 10 V 1830 6.8 nC Optimized for High-Side Synchronous0.005 at VGS = 4.5 V 16Rectifier Operation 100 % Rg Tested 100 % UIS TestedAPPLICATIONS Notebook CPU Core- High-Side Switch
fds8817nz.pdf
November 2008FDS8817NZN-Channel PowerTrench MOSFET 30V, 15A, 7.0mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 7m at VGS = 10V, ID = 15ASemiconductors advanced PowerTrench process that has Max rDS(on) = 10m at VGS = 4.5V, ID =12.6A been especially tailored to minimize the on-state resistance. HBM ESD protection leve
fds8813nz.pdf
November 2008FDS8813NZN-Channel PowerTrench MOSFET 30V, 18.5A, 4.5mFeatures General DescriptionThis N-Channel MOSFET is produced using Fairchild Max rDS(on) = 4.5m at VGS = 10V, ID = 18.5ASemiconductors advanced PowerTrench process that has Max rDS(on) = 6.0m at VGS = 4.5V, ID =16A been especially tailored to minimize the on-state resistance. HBM ESD protect
fds8817nz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
